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Process for preparing metal-organic complex electric bistable film

An organic complex, bistable technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of thick film, rough surface of film, difficult to prepare film and so on

Inactive Publication Date: 2004-08-25
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally speaking, the reaction of the chemical solution method is not easy to control, and the surface of the obtained film is rough; while the vacuum method is difficult to prepare a film with a stoichiometric ratio of 1:1, and at the same time cannot obtain a thicker film (less than 10nm).

Method used

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  • Process for preparing metal-organic complex electric bistable film
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  • Process for preparing metal-organic complex electric bistable film

Examples

Experimental program
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Effect test

Embodiment 1

[0018] Example 1 Preparation of AgTCNQ electrically bistable thin film (thinner)

[0019] Put the glass substrate into the vacuum coating machine, the vacuum degree is 1×10 -3 Pa, under room temperature conditions, first evaporate a layer of Ag film with a thickness of 10nm, and then evaporate a layer of TCNQ film with a thickness of 20nm; take out the mixed film and put it in an environment with a humidity of 100%, and the electrochemical reaction occurs rapidly to obtain The blue AgTCNQ thin film was tested for electrical bistable properties, and similar attached Figure 5 The curve shown shows that the film has good electrical bistability.

Embodiment 2

[0020] Example 2 Preparation of AgTCNQ electrically bistable thin film (thicker)

[0021] Put the glass substrate into the vacuum coating machine, the vacuum degree is 1×10 -3 Pa, under room temperature conditions, first evaporate a layer of Ag film with a thickness of 40nm, and then evaporate a layer of TCNQ film with a thickness of 80nm; take out the mixed film and put it in an environment with a humidity of 100%, and the electrochemical reaction occurs rapidly to obtain blue The color AgTCNQ thin film was tested for electrical bistability, and similar attached Figure 5 The curve shown shows that the film has good electrical bistability.

Embodiment 3

[0022] Example 3 CuTCNQ electrical bistable thin film preparation

[0023] Put the substrate into the vacuum coating machine, the vacuum is 1×10 -3 Pa, at room temperature, first evaporate a layer of Cu film with a thickness of 20nm, and then evaporate a layer of TCNQ film with a thickness of 65nm; take out the mixed film and place it in an environment with a humidity of 100%, and an electrochemical reaction occurs rapidly to obtain a green color. The CuTCNQ film was tested for electrical bistability, and similar attached Figure 5 The curve shown (the transition voltage is slightly higher, about 7V), shows that the film has good electrical bistability.

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Abstract

The present invention relates to a method for preparing metal-organic complex MTCNQ electric bistable film. Said method includes the following steps: firstly, adopting physical gas phase deposition method to deposit metal M and TCNQ mixed film, and using chemical electroplating process to prepare MTCNQ film. Said invented product can be extensively used for preparing microelectronic device, molecular electronic device and mass memory.

Description

technical field [0001] The invention belongs to the technical field of film preparation, and in particular relates to a method for preparing a metal-organic complex electric bistable film. Background technique [0002] Metal-organic complex material MTCNQ, due to its electrical bistability ([1] Potember RS, Poehler T O, Appl. Phys Lett., 1979, 34: 405), has a wide range of applications in microelectronic devices and molecular electronic devices. Application prospects. Here, M is a metal, such as Cu, Ag, etc., and TCNQ is 7,7,8,8 tetracyanoquinone dimethane (7,7,8,8-tetracyanoquinonedimethane). There are two main types of preparation methods for this type of electrically bistable thin film: one is the chemical solution method, that is, the metal M (such as Cu) sheet is directly immersed in acetonitrile (CH 3 CN) saturated TCNQ solution (previous document [1]) or acetone (C 3 h 6 O), acetonitrile saturated TCNQ solution ([2] Sato C, Wakamatsu S, Tadokoro K, Journal of Appl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06
Inventor 蒋益明谢亨博郭峰刘平李劲
Owner FUDAN UNIV
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