Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

CCD image sensor

A charge-coupled device, image sensor technology, used in electrical components, image communications, components of TV systems, etc., can solve problems such as inability to arrange photodiodes, lowering potential, and narrow paths.

Inactive Publication Date: 2004-06-16
TESSERA ADVANCED TECH
View PDF7 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0029] However, the problem with the CCD image sensor provided in the above publication is that the photodiodes cannot be arranged at a high density because the arrangement of the photodiodes is closely related to the figure 1 The photodiodes in the single-CCD type CCD image sensor shown are arranged in the same
However, this creates a problem that since the area where the charges are interconnected becomes narrower in width closer to the charge detection capacitor, due to the P + Diffusion layer, narrowing the path through which charges are transferred, therefore, P + The diffusion layer is close to the adjacent P + diffusion layer, resulting in a narrow channel effect
If the narrow channel effect is induced, the potential is lowered, therefore, the rate of charge migration is reduced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • CCD image sensor
  • CCD image sensor
  • CCD image sensor

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0090] Figure 7 is a plan view of the CCD image sensor according to the first embodiment of the present invention.

[0091] The illustrated CCD image sensor 100A includes first to fourth rows of charge transfer devices 101a, 101b, 101c, and 101d, first and second rows of photodiodes 102a and 102b, first to fourth rows of charge transfer devices 101a, 101b, 101c and 101d are connected in common to output gate 103, reset gate 104, drain 105, charge detection capacitor 106 including a floating source and source output circuit 107 serving as a charge detector.

[0092] The first to fourth charge transfer devices 101a, 101b, 101c, and 101d are structurally identical to each other, and the first and second photodiodes 102a and 102b are structurally identical to each other. The charge reading gate 110 is disposed between each of the first to fourth charge transfer devices 101a, 101b, 101c and 101d and each of the first and second photodiodes 102a and 102b. Each of the first and se...

no. 2 example

[0127] Figure 15 is in the CCD image sensor according to the second embodiment of the present invention, and Figure 7 Shown is an enlarged plan view of the area corresponding to area A, while Figure 16 is in the area Figure 15 A floor plan of the lower level below the portion described.

[0128] The CCD image sensor 100B according to the second embodiment is structurally different from the CCD image sensor 100A in the shape of the output gate 103 and the shape of the n-type well 113 located below the output gate 103 .

[0129] In the first embodiment, as Figure 12 As shown, in the layer located below the output gate 103, p + The channel stopper 115 extends to the region immediately below the gate electrode 103b, while in the region directed to the charge detection capacitor 106, the width of the n-type well 113 of the charge transfer devices 101b and 101c is narrowed. Therefore, in this region, p + The proximity of the diffusion layers to each other results in a pot...

no. 3 example

[0139] Figure 17 is a plan view of a CCD image sensor according to a third embodiment of the present invention.

[0140] A CCD image sensor 100C according to the third embodiment is structurally different from the CCD image sensors 100A and 100B according to the first and second embodiments in that the CCD image sensor 100C includes one row of charge transfer devices 101f instead of two rows of charge transfer devices 101b and 101c, and input the charge transferred by any one of the three rows of charge transfer devices 101a, 101d, and 101f into the charge detection capacitor 106.

[0141] For example, the photodiodes in the first and second photodiode rows 102a and 102b emit charge in the directions indicated by the arrows. The four rows of charge transfer devices in the CCD image sensors 100A and 100B can be replaced with the same three rows of charge transfer devices as in the third embodiment.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A CCD image sensor includes a first diode row comprised of photodiodes arranged in a row, a second diode row extending in parallel with the first diode row and comprised of photodiodes arranged in a row, photodiodes in the second diode row being staggered by a half pitch relative to photodiodes in the first diode row, a first charge transfer device transferring signal charges received from K-th photodiodes in the first diode row wherein K is an odd number, a second charge transfer device transferring signal charges received from L-th photodiodes in the first diode row wherein L is an even number, a third charge transfer device transferring signal charges received from K-th photodiodes in the second diode row, a fourth charge transfer device transferring signal charges received from L-th photodiodes in the second diode row, a charge-detecting capacitor receiving signal charges at different timings from one another from the first to fourth charge transfer devices, and a charge-detector detecting signal charges stored in the charge-detecting capacitor.

Description

technical field [0001] The present invention relates to a CCD (Charge Coupled Device) image sensor, and more particularly, to a CCD image sensor in which signal charges received from a plurality of charge transfer devices are input into a charge detection capacitor connected to the charge transfer devices sensor. Background technique [0002] Recently, CCD image sensors including a plurality of charge transfer devices are required to include photodiodes manufactured in a smaller size and have higher resolution. In order to fabricate photodiodes with smaller dimensions, charge transfer devices need to be fabricated with smaller dimensions. However, it takes more time and cost to manufacture, and therefore, it is difficult to realize a charge transfer device manufactured in a smaller size in response to a request to manufacture a photodiode in a smaller size. Therefore, photodiodes are traditionally made smaller and the number of photodiodes is increased without the need to ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/148
CPCH04N3/1581H04N3/1575H04N25/443H04N25/701H04N25/713H04N25/71
Inventor 纲井史郎
Owner TESSERA ADVANCED TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com