Prepn of porous luminescent material
A technology of porous silicon and ultrasonic generator, which is applied in the field of preparation of porous silicon materials by electrochemical anodic corrosion method, can solve the problems of slow chemical reaction, difficulty, and increase in resistance of silicon wafers, etc., and achieve simple and convenient process, good optical characteristics, and products good performance
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[0015] Put the existing pulse current corrosion tank into the ultrasonic generator, put a certain amount of water in the ultrasonic generator, and turn on the ultrasonic generator while performing pulse current corrosion. The ultrasonic is 33KHZ. Since the silicon wafer is thin, ultrasonic corrosion is selected. The time is 5 minutes. The result is as figure 2 .
[0016] According to the thickness of different silicon wafers, the frequency is 25KHZ, 30KHZ, 180KHZ, and the time is 5 seconds, 1 hour, 5 hours for ultrasonic etching, and the samples with significantly improved surface interface structure and optical properties are prepared.
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