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Method of producing polysilicon with mixed source of trichloro-hydrosilicon and silicon tetrachloride

A technology of silicon tetrachloride and trichlorosilane, applied in the direction of silicon, etc., can solve the problems of low production rate, low conversion rate, high energy consumption, etc., and achieve the goal of ensuring growth uniformity, quality and yield, and reducing costs Effect

Inactive Publication Date: 2003-03-19
TONGJI UNIV
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  • Description
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Problems solved by technology

However, the production rate of this method is low, the reduction temperature is high, the conversion rate is low, the energy consumption is high, and the hydrogen consumption and chlorine consumption are also high.
Therefore, it is not suitable for large polysilicon production plants

Method used

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  • Method of producing polysilicon with mixed source of trichloro-hydrosilicon and silicon tetrachloride
  • Method of producing polysilicon with mixed source of trichloro-hydrosilicon and silicon tetrachloride

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Embodiment Construction

[0015] Please refer to the attached figure 1 , firstly, pass the raw material HCl into SiHCl filled with industrial silicon powder 3 In the synthesis furnace (bubbling bed), crude SiHCl is obtained 3 and SiCl 4 . Then, on the one hand, crude SiHCl 3 and SiCl 4 into SiHCl 3 and SiCl 4 Refining and purification in the purification tower to remove unqualified waste SiCl 4 and SiHCl 3 , SiHCl with a purity of 9 or more 3 and SiCl 4 into the vaporizer. SiHCl on the other hand 3 H produced in the synthesis furnace 2 and residual HCl enter the separator to separate the waste HCl, and the remaining H 2 Join H 2 Standing H 2 Enter H together 2 Purification device, purified to 6 9 H 2 also enters the volatile. Next, put the SiHCl that meets the purity in the evaporator 3 and SiCl 4 and H 2 The gas is injected into the reduction furnace according to the conventional flow rate to carry out the hydrogen reduction reaction. The reduction temperature is controlled at 115...

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Abstract

The present invention, method of producing polysilicon with mixed source of trichloro-hydro silicon and silicon tetrachloride, is one completely new hydrogen reduction process of producing polysilicon. The trichloro-hydro silicon and silicon tetrachloride is first refined and purified to 9-10 nines under protective dry inert gas of 0.5-0.8 atm and the hydrogen is also refined to 5-6 nines. The material is then sprayed into hydrogen reduction furance is certain flow rate to result in silicon converting rate of 0.08% and H / Cl ratio of 0.15% of the reduction temperature is controlled in 1145-1155 deg.c, so that polysilicon is produced on the silicon rod inside the furnace. SiC14 and HCl produced in the production process is utilized fully and this results in high quality, high yield, low material consumption and low cost.

Description

technical field [0001] The invention relates to a brand-new process for producing polysilicon, a semiconductor material, by hydrogen reduction, and further relates to a method for producing polysilicon by hydrogen reduction of chlorosilane mixed with trichlorosilane and silicon tetrachloride. Background technique [0002] As we all know, the rapid development of information and control technology in today's world relies on various device chips made of silicon wafers, and the original material of silicon wafers is polysilicon. [0003] At present, most factories at home and abroad use trichlorosilane (SiHCl 3 ) The hydrogen reduction method is the Siemens method to produce polysilicon. Although the yield of this method is higher, and the SiHCl in the reaction product 3 , HCl, H 2 It can be recycled and used, but the factory produced by the conventional Siemens method, due to the lack of SiCl 4 Hydrogen reduction high-quality, high-yield expertise, so ...

Claims

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Application Information

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IPC IPC(8): C01B33/03
Inventor 闻瑞梅戴自忠梁骏吾郭钟光
Owner TONGJI UNIV
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