Programmable non-volatile memory using ultra-thin medium breakdown phenomenon

Abstract

A reprogrammable non-volatile memory array and its memory unit is disclosed, which is based on the breakdown phenomenon of ultra-thin medium. Each memory unit has one data storage element around an ultra-thin medium (grid oxidizing layer) which is used to store information. Its method is applying stress to break down it for creating the leakage current level needled by memory unt. Its reading out is realized by the sensing unit to suck current. Said ultra-thin (50 A or less) is made up by advanced CMOS logic technology.

Description

technical field [0001] The present invention relates to reprogrammable non-volatile memory, more specifically, relates to a kind of non-volatile reprogrammable semiconductor memory that utilizes the breakdown phenomenon of an ultra-thin medium (such as MOS gate medium) to store digital information . Background technique [0002] The ability of non-volatile memory to retain stored data after power is removed is desirable, or at least highly desirable, in many different types of computers and other electronic devices. A common type of nonvolatile memory is programmable read-only memory ("PROM"), which utilizes wordline-bitline crosspoint elements such as fuses, antifuses, and charge-trapping devices such as floating gate avalanche implanted metal oxide semiconductor ("FAMOS") transistors to store logic information. PROMs are generally not reprogrammable. [0003] One example is a PROM cell that uses the breakdown of a silicon dioxide layer in a c...

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Problems solved by technology

As another example, the process of making antifuse is naturally suitable for making antifuse structures and high voltage circuits, but it is also about a generation behind the standard advanced CMOS process

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