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Surface passivation method for nuclear detector tellurium-zinc-cadmium wafer

A cadmium zinc telluride wafer and nuclear detector technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve the effect of improving electrical performance

Inactive Publication Date: 2007-06-06
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the shortcomings caused by the above-mentioned single solution, and provide a two-step chemical passivation process, which can not only obtain a better stoichiometric CZT surface, but also form a layer of protective high-resistance on the surface. oxide layer

Method used

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Experimental program
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Effect test

Embodiment 1

[0012] Embodiment one: the technological process of the present embodiment comprises following each procedure,

[0013] a. Polishing of CZT crystal: the cut size is 5×5×2mm 3 The CZT wafers were rough-polished with corundum to make the surface smooth; after rough polishing, the wafers were cleaned, put into a beaker filled with deionized water and oscillated for 5 minutes to remove surface contaminants and Impurity particles, and then finely polish the CZT wafer with corundum micropowder polishing liquid with a particle size of 1um, 0.5um, and 0.2um on the grinder until the surface of the wafer is mirror-like. After fine polishing, the surface impurities are removed by ultrasonic vibration again, and the wafer is immersed in anhydrous methanol to be etched.

[0014] b. Wafer surface corrosion: The polished CZT wafer is first chemically etched with BM corrosion solution (5% Br+methanol) for 1 minute; the wafer corroded by BM corrosion solution is rinsed in methanol before usin...

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Abstract

This invention relates to a nucleus detector Te cadmium and zinc crystal pad surface passivation. The method comprises the following steps: first to polish the crystal pad, surface erosion and deposition gold electrode and surface passivation and comprises four process and is characterized by the two step method in the surface passivation, which comprises the following steps: first to get the surface near to chemical metering; then to use mixture solution of NH#-[4]F / H#-[2]O#-[2] to make oxidation layer through passivation.

Description

technical field [0001] The invention relates to a method for passivating the surface of a nuclear detector cadmium zinc telluride wafer, specifically an improved method for the passivation process of the last process in the manufacturing process of the nuclear detector cadmium zinc telluride wafer, belonging to the technical field of semiconductor detection material manufacturing. Background technique [0002] Cadmium zinc telluride (CZT) compound semiconductor detection materials have a high average atomic number and a large forbidden band width, so the detectors made of these materials have a large absorption coefficient, a high count rate, and a small volume , easy to use, and can work at room temperature and so on. Cadmium zinc telluride CZT is a new type of radiation detector with high detection efficiency. Compared with silicon and germanium detectors, it can work at room temperature. Compared with traditional sodium iodide scintillator probes, it is smaller in size. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/46H01L21/30
Inventor 桑文斌闵嘉华王昆黍秦凯丰樊建荣钱永彪
Owner SHANGHAI UNIV
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