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Method for mfg. microstructure resonance beam pressure sensor using SiNx as beam

A technology of a pressure sensor and a manufacturing method, applied in directions such as measuring fluid pressure, using mechanical devices to transmit sensing components, and measuring fluid pressure through mechanical components, can solve problems such as difficulty in controlling dimensional accuracy, reducing device performance, and high device cost, and achieve Good machining performance, reduced device cost, and good uniformity

Inactive Publication Date: 2004-07-07
INST OF ELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] 1) The manufacturing process of the beam is complicated, the process requirements are very strict, and it is difficult to control the required dimensional accuracy, which affects the yield of the device and makes the cost of the device very high
Although it can be improved by self-stop corrosion and other methods, these methods either reduce device performance or increase expensive equipment, thereby increasing costs.
Increasing the process steps itself also increases the complexity of the process, and the cost of the process increases significantly

Method used

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  • Method for mfg. microstructure resonance beam pressure sensor using SiNx as beam
  • Method for mfg. microstructure resonance beam pressure sensor using SiNx as beam
  • Method for mfg. microstructure resonance beam pressure sensor using SiNx as beam

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Embodiment Construction

[0028] From Figure 5 , Figure 6 and figure 1 , the comparison of the resonant beam pressure sensor chip in Figure 2, we can clearly see that the composite beam membrane SiN x The microstructure resonant beam pressure sensor is different from the silicon microstructure resonant beam pressure sensor, wherein the value of x is 0.3-0.8. The chip of the silicon microstructure resonant beam pressure sensor is composed of two silicon chips that have been three-dimensionally processed, and the composite beam membrane SiN x The microstructure resonant beam pressure sensor chip is just a three-dimensional processed silicon chip.

[0029] With ultra-thick low stress SiN x The core of the resonant beam pressure sensor is the composite beam-membrane microstructure of the beam. The core of the pressure sensor is the resonator, which contains the excitation unit that makes the beam generate forced vibration and the vibration pickup unit that detects the resonance signal. The excitatio...

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Abstract

A process for preparing the pressure sensor using SiNx as micro resonant beam includes depositing SiN film on polished silicon substrate, depositing sacrificial layer, etching, depositing SiNx film, preparing vibration exciting and picking up resistors, preparing metal leading wires, etching beam slot, preparing resonant beam, etching low-stress nitrogen silicide film on the back of Si substrate to form corrosion windows, corrosion, preparing pressure-sensitive film, corrosiding out sacrificial layer, releasing SiNx beam, welding leading wire and vacuum packaging.

Description

technical field [0001] The present invention relates to the manufacture method of miniature pressure sensor, particularly relate to SiN x Fabrication method for a novel microstructure resonant beam pressure sensor for the beam. Background technique [0002] So far, the microstructure resonant beam pressure sensor made by MENS technology is mainly made of single crystal silicon and polycrystalline silicon materials. The silicon resonant beam pressure sensor is mainly used for high-precision pressure measurement. Because it has a frequency output, it is easy to carry out digital processing; because it is manufactured with microelectronic technology, it is easy to achieve miniaturization, integration, and low-cost mass production. [0003] A common silicon microstructure resonant beam pressure sensor includes three parts: a resonant beam pressure sensor chip (1), a tube cap (3), and a tube seat (4). The silicon microstructure resonant beam pressure sensor chip is connected to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01D5/02G01L7/00
Inventor 于中尧崔大付陈德勇
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
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