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Method for preparing diamond based on graphite under low pressure

A diamond and graphite technology, which is applied in the field of preparing diamond based on graphite under low pressure, can solve the problems of difficult high-quality uniform films, reduced film purity, and low deposition rate, and achieves the effects of simple process, low equipment requirements, and low cost

Active Publication Date: 2022-07-15
ZHEJIANG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the MPCVD method is difficult to obtain large-area high-quality uniform films; the HFCVD method will introduce metal impurities, resulting in a decrease in film purity; the CFCVD method has low deposition rates and high deposition temperatures; therefore, the development of new diamond preparation methods is of great value

Method used

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  • Method for preparing diamond based on graphite under low pressure
  • Method for preparing diamond based on graphite under low pressure
  • Method for preparing diamond based on graphite under low pressure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0072] (1) Grind the graphite sheet (sequentially with 2000-mesh and 4000-mesh sandpaper), polish (polish with polishing flannel), ultrasonically clean in ethanol (140W ultrasonic for 15 minutes), clean with deionized water, dry (nitrogen gun blows) dry) to obtain a pretreated graphite sheet; the above pretreatment is to obtain a graphite sheet with a smooth and clean surface, which is wrapped with lens tissue after drying.

[0073] (2) The tantalum wire is installed 5mm away from the sample surface, the carbonization gas source is hydrogen and acetone, and the acetone is brought into the reaction chamber in the form of bubbling with hydrogen, the flow rate of the pure hydrogen is 200sccm, and the flow rate of the acetone is 80sccm ; 7V carbonization for 8 minutes, 12V carbonization for 7 minutes, 15V carbonization for 3 minutes, the total carbonization time is 18min, and the carbonization pressure is controlled to 5.7kPa. After the carbonization is completed, the power is rapi...

Embodiment 2

[0091] (1) Grind the graphite sheet (sequentially with 2000-mesh and 4000-mesh sandpaper), polish (polish with polishing flannel), ultrasonically clean in ethanol (140W ultrasonic for 15 minutes), clean with deionized water, dry (nitrogen gun blows) dry) to obtain a pretreated graphite sheet; the above pretreatment is to obtain a graphite sheet with a smooth and clean surface, which is wrapped with lens tissue after drying.

[0092] (2) The tantalum wire is installed 5mm away from the sample surface, the carbonization gas source is hydrogen and acetone, and the acetone is brought into the reaction chamber in the form of bubbling with hydrogen, the flow rate of the pure hydrogen is 200sccm, and the flow rate of the acetone is 80sccm ; 7V carbonization for 10min, 12V carbonization for 10min, 15V carbonization for 5min, the total carbonization time is 25min, the control carbonization pressure is 5.7kPa, after the carbonization is completed, the power is rapidly reduced to 0 in a h...

Embodiment 3

[0102] (1) Grind the graphite sheet (sequentially with 2000-mesh and 4000-mesh sandpaper), polish (polish with polishing flannel), ultrasonically clean in ethanol (140W ultrasonic for 15 minutes), clean with deionized water, dry (nitrogen gun blows) dry) to obtain a pretreated graphite sheet; the above pretreatment is to obtain a graphite sheet with a smooth and clean surface, which is wrapped with lens tissue after drying.

[0103] (2) The tantalum wire is tooled by means of double helical wire. The tantalum wire is 18mm away from the surface of the sample, and the carbonization time is 0min.

[0104] (3) Put the pretreated graphite sheet described in step (1) into the hot filament chemical vapor deposition (HFCVD) equipment described in step (2) as a substrate, and feed hydrogen with a flow rate of 100sccm and a power of 400W , control the air pressure to 3.5kPa, after 0.5h, reduce the power to 0 at a speed of 1V / min in a hydrogen atmosphere, and complete the first HFCVD tre...

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Abstract

The invention discloses a method for preparing diamond based on graphite under low pressure, which combines theoretical calculation and experimental research of a first principle, and realizes conversion from graphite to diamond under low pressure by depositing transition metal on the surface of graphite; the method has the advantages of being mild in condition, low in cost, low in equipment requirement, simple in process and easy to operate, the obtained transition metal terminated diamond has the semiconductor property, and a new material is provided for application of diamond electronic devices.

Description

Technical field [0001] The invention relates to a new method for preparing diamond based on graphite under low pressure. Background technique [0002] Diamond has excellent physical, chemical, mechanical and electrical properties, such as high thermal conductivity, low thermal expansion coefficient, high hardness, acid resistance, alkali resistance, resistance to various corrosive gases, high electron mobility and wide bandgap. It has broad application prospects in the fields of high-frequency and high-power devices, high-energy particle detectors, quantum information, and biosensors. [0003] As we all know, high temperature and high pressure (HPHT) method and chemical vapor deposition (CVD) method are currently common methods for preparing high-purity, bulk single crystal diamond. The experimental conditions for synthesizing high-quality bulk single crystal diamond using the HPHT method are extremely harsh. The pressure required for phase transformation is as high as seve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/26
CPCC01B32/26
Inventor 胡晓君朱志光姜从强陈成克郭迪峰柯昌成
Owner ZHEJIANG UNIV OF TECH
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