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Waste gas treatment device for polycrystalline silicon preparation and use method of waste gas treatment device

A waste gas treatment device and polysilicon preparation technology, applied in the direction of separation methods, feeding devices, chemical instruments and methods, etc., can solve the problem of filter blockage, poor purification of waste gas, and poor recovery of waste gas heat Use and other problems to achieve the effect of reducing heat loss and reducing workload

Pending Publication Date: 2022-07-05
WUHAN HONGAO GREEN ENERGY ENG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the deficiencies of the prior art, the present invention provides a waste gas treatment device for the preparation of polysilicon and its use method, which solves the problem that a large amount of waste gas will be generated during the preparation of the existing polysilicon, and these waste gases generally need to be filtered before they can be discharged. , but during the filtration process, the impurities in the exhaust gas can easily cause the blockage of the filter screen, the workload of manual processing is large, and the heat in the exhaust gas cannot be recycled and utilized, and the exhaust gas generally needs to be purified. question

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  • Waste gas treatment device for polycrystalline silicon preparation and use method of waste gas treatment device

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Embodiment Construction

[0029] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0030] see Figure 1-5 , the present invention provides a technical solution: a waste gas treatment device for polycrystalline silicon preparation, comprising an installation frame 1 and a bracket 2 fixed on the top of the installation frame 1, a reaction furnace 3 is fixedly installed on the bracket 2, and the top of the reaction furnace 3 is connected There is an exhaust pipe 4, and a heat recovery tank 5, a filter tank 6, and a pur...

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Abstract

The waste gas treatment device comprises an installation frame and a support fixed to the top of the installation frame, a reaction furnace is fixedly installed on the support, the top of the reaction furnace communicates with an exhaust pipe, and a heat recovery tank, a filtering tank and a purification tank are sequentially fixed to the top of the installation frame from back to front; and the left side of the heat recovery tank communicates with a high-temperature induced draft fan, and an air inlet of the high-temperature induced draft fan communicates with one end of an exhaust pipe. According to the waste gas treatment device for polycrystalline silicon preparation and the use method thereof, through the arrangement of the shaking anti-blocking mechanism, airflow generated when a high-temperature induced draft fan drives waste gas to flow is conveniently used as power, then reciprocating vibration of a filter screen is achieved, impurities accumulated on the filter screen are effectively reduced, the workload of workers is reduced, and the working efficiency is improved. And through the arrangement of the heat recovery mechanism, heat in the waste gas can be conveniently recycled, and heat loss is effectively reduced.

Description

technical field [0001] The invention relates to the technical field of polycrystalline silicon preparation, in particular to a waste gas treatment device for polycrystalline silicon preparation and a use method thereof. Background technique [0002] Polysilicon is a form of elemental silicon. When the molten elemental silicon solidifies under supercooling conditions, the silicon atoms are arranged into many crystal nuclei in the form of diamond lattice. If these crystal nuclei grow into crystal grains with different crystal plane orientations, these crystal grains combine to crystallize into polycrystalline silicon. . Utilization value: The development trend of solar cells can be seen from the current development process of international solar cells. Grey metallic luster. Density 2.32 to 2.34. Melting point 1410 ℃. Boiling point 2355 ℃. Soluble in the mixed acid of hydrofluoric acid and nitric acid, insoluble in water, nitric acid and hydrochloric acid. The hardness i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01D46/00B01D46/42B01D46/76B01D53/00B01J4/00
CPCB01D46/0005B01D46/4218B01D53/00B01J4/00
Inventor 谭德军
Owner WUHAN HONGAO GREEN ENERGY ENG
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