Plasma processing device and plasma processing method

Abstract

The invention discloses a plasma processing device and method, and the device comprises a reaction chamber, and the reaction chamber comprises a gas inlet device which is used for conveying clean gas to the reaction chamber; the radio frequency power supply is used for dissociating the clean gas into clean plasma; a cleaning wafer having a first diameter; and the electrostatic chuck is used for bearing the cleaning wafer and has a second diameter, and the difference value between the first diameter and the second diameter is smaller than or equal to + / -0.5 mm. In the cleaning step, the cleaning wafer with the size close to that of the electrostatic chuck 110 is adopted to cover the surface of the electrostatic chuck, the damage degree of cleaning plasma to the upper surface of the electrostatic chuck can be effectively reduced, meanwhile, the cleaning wafer cannot shield the second upper surface 134 of the focusing ring and a gap between the focusing ring and the electrostatic chuck, and the cleaning efficiency is improved. Sediments on the second upper surface of the focusing ring and in the gap can be effectively removed by the cleaning plasma.

Description

technical field [0001] The present invention relates to the field of semiconductor equipment, in particular to the technical field of plasma cleaning. Background technique [0002] In the fabrication of semiconductor devices, plasma etching is a key process for processing wafers into designed patterns. [0003] In a typical plasma etch process, process gases such as CF 4 , O 2 etc.) in the reaction chamber to form plasma under the action of radio frequency (RadioFrequency, RF) excitation. These plasmas physically bombard and chemically react with the wafer surface to etch wafers with specific structures. [0004] After the wafer is etched, the wafer is taken out by moving the manipulator. In order to ensure the uniformity of wafer processing in different batches, after the wafer is moved out of the reaction chamber, the reaction chamber needs to be cleaned by plasma, and the reaction chamber needs to be cleaned by plasma. Enter the cleaning gas, apply radio frequency to ...

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Problems solved by technology

[0005] With the development of the process, part of the etching process will produce thicker deposits on the surface of the parts. In the cleaning step, in order to ensure the cleaning effect of the deposits, it is necessary to apply a relatively high-power radio frequency signal to the electrostatic chuck. , since the electrostatic chuck is exposed to the cleaning plasma, some areas may be damaged by the bombardment of the cleaning plasma, which is not conducive to the stable operation of the plasma processing device. Therefore, it is necessary to provide a plasma that can work stably in the cleaning step processing device

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