Same-side electrode InGaAs backlight monitoring detector and manufacturing method thereof

Abstract

The invention relates to a same-side electrode InGaAs backlight monitoring detector and a manufacturing method thereof.The detector comprises an InP substrate, an N-type InP layer is arranged on the InP substrate, an unintentionally-doped intrinsic I-InGaAs layer is arranged in a first area on the N-type InP layer, an N electrode is arranged in a second area on the N-type InP layer, an InP window layer is arranged on the I-InGaAs layer, a Zn diffusion area is formed in a photosensitive area of the InP window layer by means of Zn diffusion doping, and the N electrode is arranged on the first area of the N-type InP layer. The other part is an unintentionally doped U-InP region, the upper middle part of the Zn diffusion region is provided with an anti-reflection layer, the periphery of the anti-reflection layer is provided with a Zn diffusion doped InGaAs contact layer, the part outside the Zn diffusion region is provided with a passivation layer, and the passivation layer is provided with a P electrode. The detector is easy to manufacture, high in yield and low in packaging cost.

Description

technical field [0001] The invention belongs to the technical field of optical communication, and in particular relates to a same-side electrode InGaAs backlight monitoring detector and a manufacturing method thereof. Background technique [0002] In the prior art, the front side of a conventional monitoring PD (MPD) consists of a photosensitive surface, a P electrode, a passivation layer, and a dicing area, and the back side is covered by an N electrode. The conventional MPD adopts a vertical packaging form, and the edge-emitting laser (LD) emits a light beam from the back to the photosensitive area of ​​the MPD, and the photosensitive area absorbs the light and converts it into photocurrent to realize the monitoring of the laser backlight power. Since the MPD N electrode is on the back of the chip, it cannot be directly wired. Therefore, the MPD needs to be fixed to a front-side gold-plated pad with conductive silver glue first, and the N-electrode wire is hit on the gold...

AI Technical Summary

Problems solved by technology

The disadvantages of the existing structure are: 1) Due to the different-surface electrode configuration, it needs to be used with spacers in the actual use process, which not only increases the material cost but also increases the die-bonding steps and reduces the production capacity; 2) The entire wafer is shared N-type electrode, the chip cannot identify abnormal N-type ohmic contact core particles during the wafer-level test process, and there is a risk of leakage of abnormal core particles; The InP substrate has poor adhesion and is prone to back gold peeling off; 4) The ohmic contact of the N-type electrode on the back requires an annealing process, and it can only be carried out in the form of a thinned wafer, which has the risk of fragmentation, resulting in the scrapping of the chip source

Images