Low-cost linear power amplifier

Abstract

The invention discloses a low-cost linear power amplifier, which belongs to the technical field of integrated circuits and comprises an input matching network, a common-emitter common-base adaptive bias power supply network, a multi-channel common-emitter base rectification stack common-emitter rectification amplification network and an output matching network. On the basis of the multi-path common-emitter base rectification stacking common-emitter rectification amplification network and in combination with the common-emitter common-base adaptive bias power supply network, the amplifier can adapt to temperature fluctuation and power dynamic fluctuation, and it is guaranteed that the common-emitter stacking common-base amplification circuit has a good wide dynamic linearity index and a low power consumption index; and moreover, the antenna has the characteristics of high gain, high linearity, high output power and high integration level.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to a low-cost linear power amplifier. Background technique [0002] With the rapid development of wireless communication and wireless local area network (WLAN), RF front-end transmitters are also developing in the direction of high performance, high integration, low power consumption and low cost. Therefore, the market urgently needs linear power amplifier chips with high gain, high linearity, low power consumption and low cost. Due to the high power capacity and low cost of the GaAs HBT process, the research and development of linear power amplifier chips based on the GaAsHBT process has received extensive attention. [0003] The existing solutions based on HBT process linear amplifier chips have some deficiencies, mainly reflected in: [0004] (1) Based on the traditional common-emitter amplifier scheme, the scheme has a simple structure and low design co...

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Problems solved by technology

[0005] (2) Based on the traditional cascode amplifier scheme, in order to improve the single-stage power gain, the direct combination structure of the cascode amplifier can be used, but in order to improve the power capacity, this structure often needs to be designed with a multi-finger HBT transistor structure , but this approach will introduce a thermal reliability risk

[0006] (3) There are deficiencies in the temperature compensation circuit based on the traditional HBT amplifier. For example, the cascode amplifier directly combines the structure of the amplifier, and its cascode amplifier often uses a resistor feed network, which leads to the temperature fluctuation and power dynamic fluctuation characteristics of the amplifier. Poor, the temperature compensation effect of the feed network is weak, and the linearity index deteriorates

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