System and method for controlling oxygenation of czochralski silicon single crystal

Abstract

The invention discloses a czochralski silicon single crystal oxygenation control system and method, and the system comprises a housing, the housing is fixedly connected with a first motor, the first motor is connected with a gear assembly, the end, close to the gear assembly, of the output side of the first motor is connected with a driving mechanism, and the side end of the gear assembly is connected with a driven shaft. The upper end of the driven shaft is fixedly connected with a containing shell, the driven shaft is connected with a second belt wheel assembly, the second belt wheel assembly is connected with a cleaning rod, the shell is fixedly connected with an air extractor and a vortex chamber, and the vortex chamber is fixedly connected with a cold air pipe. According to the Czochralski silicon single crystal oxygenation control system and method, cold air is guided to the end of the separating piece through the cold air connecting rod via the corrugated pipe, the rotating plate is jacked up under the action of the cold air, the cold air is discharged to the bottom end of the quartz crucible through the air injection groove expanded by the rotating plate and the filter plate, and the quartz crucible shrinks when cooled.

Description

technical field [0001] The invention relates to the technical field of Czochralski single crystal silicon, in particular to a control system and method for oxygenation of Czochralski silicon single crystal. Background technique [0002] Monocrystalline silicon, a single crystal of silicon, a crystal with a substantially complete lattice structure. Different directions have different properties. It is a good semiconducting material with excellent physical, chemical, mechanical and semiconductor properties. Therefore, it is widely used as a basic material in the manufacturing process of large-scale integrated circuits, semiconductor devices and photovoltaic solar cells. middle. [0003] In the existing Czochralski silicon single crystal production process, the corresponding control system is required to increase oxygen treatment. After the production of most existing oxygen increase control systems, the cooling of the steel ingot and the quartz crucible cannot be accelerated,...

AI Technical Summary

Problems solved by technology

[0004] Aiming at the deficiencies of the prior art, the present invention provides a control system and method for oxygenation of Czochralski silicon single crystals, which solves the problems of poor cooling of the device, lower production efficiency, inability to deal with toxic gases in time and potential safety hazards, etc.

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