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Method for preparing MA3Bi2I9 perovskite solar cell by controlling BiI3 film orientation through solvent evaporation induction

A technology of evaporation induction and thin film orientation, which is applied in the field of solar cells, can solve the problems of grain crossing difference, achieve the effect of optimizing reaction time and facilitating carrier transport

Pending Publication Date: 2022-05-27
NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the rapid crystallization of solution-fabricated MBI films, a poor morphology with a large number of grain intersections is formed, which inhibits the carrier transport in perovskite films.

Method used

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  • Method for preparing MA3Bi2I9 perovskite solar cell by controlling BiI3 film orientation through solvent evaporation induction
  • Method for preparing MA3Bi2I9 perovskite solar cell by controlling BiI3 film orientation through solvent evaporation induction
  • Method for preparing MA3Bi2I9 perovskite solar cell by controlling BiI3 film orientation through solvent evaporation induction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] 1) BiI 3 Preparation of precursor solution: Weigh 1 mmol of bismuth iodide (BiI 3 ), dissolved in 1 mL of DMF, followed by stirring at room temperature for 12 hours to obtain a solution of 1 mmol / mL;

[0044] 2) BiI 3 Thin film pre-preparation: the precursor solution was covered with an electron transport layer on the FTO substrate, rotated at a speed of 3000rpm for 30s by a homogenizer, and then placed in an airtight container in a glove box to stand for 0h;

[0045] 3) BiI 3 Thin film annealing: BiI after standing 3 The film was put into a heating table at 120°C for 30min annealing treatment;

[0046] 4) BiI 3 Coexistence with MBI Thin Film Preparation: BiI After Annealing 3 The film was placed in a lidded glass petri dish and the MAI powder was evenly dispersed around it. The glass petri dish was placed in a vacuum drying oven, and MAI was deposited by heating at a low pressure of 10KPa at 100°C, and the reaction time was 30min;

[0047] 5) Preparation of hol...

Embodiment 2

[0051] 1) BiI 3 Preparation of precursor solution: Weigh 1 mmol of bismuth iodide (BiI 3 ), dissolved in 1 mL of DMF, followed by stirring at room temperature for 12 hours to obtain a solution of 1 mmol / mL;

[0052] 2) BiI 3 Thin film pre-preparation: the precursor solution is covered with an electron transport layer on the FTO substrate, rotated at a speed of 3000rpm for 30s by a glue homogenizer, and then placed in an airtight container to stand for 1h;

[0053] 3) BiI 3 Thin film annealing: BiI after standing 3 The film was put into a heating table at 120°C for 30min annealing treatment;

[0054] 4) BiI 3 Coexistence with MBI Thin Film Preparation: BiI After Annealing 3 The film was placed in a lidded glass petri dish and the MAI powder was evenly dispersed around it. The glass petri dish was placed in a vacuum oven, and MAI was deposited by heating at a low pressure of 10KPa at 100°C, and the reaction time was 30min;

[0055] 5) Preparation of hole transport layer:...

Embodiment 3

[0059] 1) BiI 3 Preparation of precursor solution: Weigh 1 mmol of bismuth iodide (BiI 3 ), dissolved in 1 mL of DMF, followed by stirring at room temperature for 12 hours to obtain a solution of 1 mmol / mL;

[0060] 2) BiI 3 Film pre-preparation: the precursor solution is covered with an electron transport layer on the FTO substrate, rotated at 3000rpm for 30s by a glue homogenizer, and then placed in a closed container for 2h;

[0061] 3) BiI 3 Thin film annealing: BiI after standing 3 The film was put into a heating table at 120°C for 30min annealing treatment;

[0062] 4) BiI 3 Coexistence with MBI Thin Film Preparation: BiI After Annealing 3 The film was placed in a lidded glass petri dish and the MAI powder was evenly dispersed around it. The glass petri dish was placed in a vacuum oven, and MAI was deposited by heating at a low pressure of 10KPa at 100°C, and the reaction time was 30min;

[0063] 5) Preparation of hole transport layer:

[0064] Preparation of sp...

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Abstract

The invention provides a method for preparing an efficient MA3Bi2I9 perovskite solar cell by controlling BiI3 film orientation through solvent evaporation induction, which comprises the following steps of: firstly, spin-coating a DMF (Dimethyl Formamide) precursor solution of BiI3 on a fluorine-doped tin oxide (FTO) substrate deposited with TiO2 to prepare a BiI3 film, and then, putting the prepared BiI3 wet film into a glove box room-temperature closed container; due to the sealing condition in the container, DMF evaporated from the wet film can generate a DMF atmosphere, so that the evaporation rate of the DMF is greatly reduced. By slowing down DMF evaporation, the product with preferred orientation (113) and (300) is successfully prepared; meanwhile, the (003) crystal face of the BiI3 film is weakened. Then, the prepared BiI3 thin film reacts with MAI to form an MBI thin film; the growth of the crystal face of BiI3 (003) is limited, and the crystal face of MBI (006) is also effectively limited, so that compared with a device prepared from an MBI film with preferred orientation of (006), the device is more beneficial to carrier transport.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a solvent evaporation induced control BiI 3 Preparation of High Efficiency MA by Thin Film Orientation 3 Bi 2 I 9 Perovskite solar cell approach. Background technique [0002] In recent years, based on the improvement of the optoelectronic properties and device structure of perovskite materials, the efficiency (PCE) of perovskite solar cells (PSCs) has rapidly increased from 3.9% to 25.7%. However, due to the PbI in perovskite 6 Octahedron prone to tilt and Pb 2+ and toxicity greatly limit its market application prospects due to the presence of PbI 6 Therefore, the development of non-toxic / low-toxic lead-free perovskite materials is of great scientific and application value. Among the many non-lead elements, Sn 2+ and Bi 3+ Substitute Pb 2 + It has attracted extensive attention as an efficient way to fabricate environmentally friendly perovskite solar cells. Curre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/42H01L51/46
CPCH10K71/10H10K85/30H10K30/30Y02E10/549
Inventor 姚建曦许佳李吉红李必萃
Owner NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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