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Preparation method of red and yellow light emitting diode epitaxial wafer

A technology for light-emitting diodes and epitaxial wafers, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of uneven thickness, uneven substrate thickness, affecting the uniformity of light output of red and yellow light-emitting diodes, etc. Achieve uniform thickness reduction, ensure light uniformity, and facilitate operation.

Pending Publication Date: 2022-05-27
HC SEMITEK ZHEJIANG CO LTD
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Problems solved by technology

In this way, sticking is easy to occur between the substrate and the support plate, and the process of melting and bonding the solid wax to the substrate is prone to uneven thickness, which may also easily lead to uneven thickness of the final substrate, affecting the final The light uniformity of the obtained red and yellow light-emitting diodes

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  • Preparation method of red and yellow light emitting diode epitaxial wafer
  • Preparation method of red and yellow light emitting diode epitaxial wafer
  • Preparation method of red and yellow light emitting diode epitaxial wafer

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Embodiment Construction

[0038] In order to make the objectives, technical solutions and advantages of the present disclosure clearer, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0039] Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," "third," and similar terms used in the description and claims of the presently disclosed patent application do not denote any order, quantity, or importance, but are merely used to distinguish the different components . Likewise, "a" or "an" and the like do not denote a quantitative limitation, but rather denote the presence of at least one. Words like "include" or "include" mean that the elements or items appearing before "including" or "including" cover the elements or items listed after "including" or "including" and the...

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Abstract

The invention provides a preparation method of a red and yellow light emitting diode epitaxial wafer, and belongs to the technical field of diode preparation. The surface, far away from the substrate, of the epitaxial wafer, namely the surface, far away from the epitaxial layer, of the substrate is adhered to the supporting film, the supporting film can play a role in uniformly supporting the whole epitaxial wafer and can be stably adhered to the epitaxial wafer, and the surface, far away from the epitaxial layer, of the substrate can be uniformly thinned while operation is facilitated. An epitaxial wafer is placed on a supporting table through a supporting film, a substrate of the epitaxial wafer is thinned through a grinding wheel, the axis of the grinding wheel is perpendicular to the surface of the substrate, the projection area of the grinding wheel on the plane where the surface of the substrate is located is larger than the surface area of the substrate, it is guaranteed that the face, away from the epitaxial wafer, of the substrate is thinned stably through the grinding wheel, and the thickness of the substrate is evenly reduced; and the uniformity of the thickness of the finally obtained substrate is improved, so that the light emitting uniformity of the finally obtained red and yellow light emitting diode is ensured.

Description

technical field [0001] The present disclosure relates to the technical field of diode preparation, in particular to a preparation method of a red-yellow light emitting diode epitaxial wafer. Background technique [0002] The red-yellow light-emitting diode is an important light source device, which is widely used in outdoor lighting, traffic lights or automobile taillights. The preparation method of the red and yellow light emitting diode epitaxial wafer usually includes a substrate and a Bragg reflector, an n-type AlInP confinement layer, a light-emitting layer, a p-type AlInP confinement layer, a p-type AlGaInP transition layer, and a p-type GaP layer sequentially stacked on the substrate. Ohmic contact layer. [0003] For light extraction requirements, after some red and yellow light emitting diode epitaxial wafers are grown, the substrate needs to be thinned to improve light extraction. The process of thinning the substrate is to adhere the side of the substrate where ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L21/304
CPCH01L33/0062H01L21/3046
Inventor 卞广彪
Owner HC SEMITEK ZHEJIANG CO LTD
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