Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Modeling method of threshold transformation memristor based on transmission mechanism

A technology of transmission mechanism and modeling method, applied in the field of memristor, can solve the problems of lack of modeling scheme, immature threshold transition memristor, etc., to achieve the effect of convenient and flexible application

Pending Publication Date: 2022-05-27
ANHUI UNIVERSITY
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the research on the model of threshold switching memristor is still immature, and there is a lack of corresponding modeling schemes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Modeling method of threshold transformation memristor based on transmission mechanism
  • Modeling method of threshold transformation memristor based on transmission mechanism
  • Modeling method of threshold transformation memristor based on transmission mechanism

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. It does not constitute a limitation of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present invention.

[0015] like figure 1 Shown is a schematic flowchart of a method for modeling a threshold transition memristor based on a transmission mechanism provided by an embodiment of the present invention, and the method includes:

[0016] Step 1. Model the threshold transition memristor using the space charge limited current mechanism SCLC;

[0017] Wherein, the threshold transition memri...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a threshold transformation memristor modeling method based on a transmission mechanism. The threshold transformation memristor is modeled by using a space charge limiting current mechanism (SCLC); wherein the threshold transformation memristor comprises a TaOx memristor, a VOx memristor and a NbOx memristor which are proved to have threshold characteristics by experiments; carrying out modeling on the other type of threshold transformation memristors by utilizing a direct tunneling to Fowler-Nodeham tunneling mechanism (DT-FNT); wherein the other type of threshold value conversion memristors comprise memristors of which the threshold value characteristics are proved by experiments, wherein the memristors comprise HfOx: Ag, SiOxNy: Ag and SiO2: Ag. The method has the advantages of completeness and high efficiency, and flexible application of the memristor in a circuit can be facilitated.

Description

technical field [0001] The invention relates to the technical field of memristors, in particular to a method for modeling a threshold transition memristor based on a transmission mechanism. Background technique [0002] As an emerging electronic component, memristor was proposed by Cai Shaotang in 1971. It has low power consumption, high density, fast operation and high endurance, as well as the ability to integrate with standard CMOS circuits, making memory technology become the focus of attention. Building a suitable memristor model is of great significance for exploring the application scenarios of memristors. [0003] At present, the model research on threshold transition memristor is still immature, and the corresponding modeling scheme is lacking. SUMMARY OF THE INVENTION [0004] The purpose of the present invention is to provide a method for modeling a threshold transition memristor based on a transmission mechanism, which is more complete and efficient than a sin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F30/33G06F30/3323
CPCG06F30/33G06F30/3323
Inventor 吴祖恒邹建勋李星代月花
Owner ANHUI UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com