Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Lateral light mode control high-power semiconductor device and preparation method thereof

A semiconductor, high-power technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of high beam quality, high brightness, high integration, etc., to achieve the effect of improving the brightness of the light, reducing the divergence angle, and increasing the thermal conductivity

Active Publication Date: 2022-05-13
SUZHOU EVERBRIGHT PHOTONICS CO LTD +1
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Therefore, the technical problem to be solved by the present invention is to overcome the problems of high light output brightness, high beam quality, low cost, and high integration in the prior art, so as to provide a side light mode control high-power semiconductor device and its preparation method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lateral light mode control high-power semiconductor device and preparation method thereof
  • Lateral light mode control high-power semiconductor device and preparation method thereof
  • Lateral light mode control high-power semiconductor device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] An embodiment of the present invention provides a side light mode control high-power semiconductor device, refer to figure 1 ,include:

[0045] Semiconductor substrate layer 100;

[0046] an active layer 130 located on the semiconductor substrate layer 100;

[0047] The front electrode layer 160 located on the side of the active layer 130 away from the semiconductor substrate layer 100, the front electrode layer 160 includes an electrode injection region 160A; From the central region of the electrode injection region 160A to the edge region of the electrode injection region 160A, the thickness of the electrode injection region 160A decreases gradually.

[0048] In this embodiment, the side-light mode control high-power semiconductor device is an edge-emitting semiconductor laser.

[0049] The material of the semiconductor substrate layer 100 includes silicon, gallium arsenide or aluminum gallium arsenide. In other embodiments, the material of the semiconductor subst...

Embodiment 2

[0075] The difference between this embodiment and embodiment 1 is: refer to Figure 6 , the lateral light mode control high-power semiconductor device further includes: a thermal compensation layer 210, the thermal compensation layer 210 is located on the side of the non-injection electrode region 160B facing the active layer 130 and is in contact with the non-injection electrode region 160B, the thermal compensation layer The thermal conductivity of the solder layer is less than that of the solder layer.

[0076] In this embodiment, since the thermal conductivity of the thermal compensation layer 210 is smaller than the thermal conductivity of the solder layer, the thermal conductivity of the thermal compensation layer 210 is smaller, reducing the impact of the semiconductor film directly below the thermal compensation layer 210 on non-injection. The degree of thermal conductivity of the electrode region 160B reduces the temperature gradient of the active layer 130 directly b...

Embodiment 3

[0090] The difference between this embodiment and embodiment 2 is: reference Figure 7 , the thermal compensation layer 210a includes a first compensation region M1 and a second compensation region M2 arranged in the direction of the slow axis, the distance from the first compensation region M1 to the electrode injection region 160A is smaller than that of the second compensation region M2 The distance to the electrode injection region 160A; the thickness of the second compensation region M2 is greater than the thickness of the first compensation region M1.

[0091] against Figure 7 The thermal compensation layer, the effect simulation picture is as follows Figure 8 ,and Figure 7 structure while comparing the figure 1 and Figure 6 The structure, by increasing the thickness of the second compensation region M2, the temperature of the active layer under the first compensation region M1 adjacent to the ridge region is further increased, the active layer under the first co...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a lateral light mode control high-power semiconductor device and a preparation method thereof, and a semiconductor packaging structure. The lateral light mode control high-power semiconductor device comprises a semiconductor substrate layer; the active layer is positioned on the semiconductor substrate layer; the front electrode layer is located on the side, away from the semiconductor substrate layer, of the active layer and comprises an electrode injection region; the thickness of the electrode injection region is gradually reduced from the central region of the electrode injection region to the edge region of the electrode injection region in the slow axis direction of the lateral light mode control high-power semiconductor device. The semiconductor device is high in light emitting brightness, high in light beam quality, low in cost and high in integration level.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a side light mode controlled high-power semiconductor device and a preparation method thereof. Background technique [0002] The semiconductor light-emitting structure is a device that uses a certain semiconductor material as a working substance to produce stimulated emission. Its working principle is: through a certain excitation method, between the energy band (conduction band and valence band) of the semiconductor material, or the Between the energy band of the material and the energy level of the impurity (acceptor or donor), the particle number inversion of the non-equilibrium carrier is realized. When a large number of electrons and holes in the particle number inversion state recombine, stimulated emission occurs Because of its small size and high electro-optic conversion efficiency, semiconductor light-emitting devices are widely used. [0003] In the prior art, h...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/38H01L33/64H01L33/00
CPCH01L33/38H01L33/642H01L33/641H01L33/005H01L2933/0016
Inventor 王俊刘武灵谭少阳王邦国赵武廖新胜
Owner SUZHOU EVERBRIGHT PHOTONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com