Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Gallium nitride amplifier circuit

An amplifier circuit, gallium nitride technology, applied in the direction of amplifiers, radio frequency amplifiers, amplifier types, etc., can solve the problems of low durability and low reliability, and achieve the effects of low manufacturing cost, increased reliability and high reliability

Pending Publication Date: 2022-05-06
CHANG GUNG UNIVERSITY
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Therefore, as the aforementioned electronic circuit using silicon material as the basic material, it is well known that due to the fact that silicon material cannot withstand radiation in a radiation environment, the durability of electronic circuits made of silicon material is poor. lower, so that the reliability (reliability) is also lower, and the proton beam equipment needs to use the electronic circuit with better durability and high reliability, that is, the traditional proton beam equipment needs to be loaded with high reliability Electronic circuits that allow the proton beam equipment to be used continuously without any damage under certain conditions and for the time it is used

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gallium nitride amplifier circuit
  • Gallium nitride amplifier circuit
  • Gallium nitride amplifier circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] Please refer to the illustration and description of the accompanying drawings below to describe the embodiments of the present invention. In the drawings, the same component symbols represent the same components, and the size or thickness of components may be exaggerated for clarity.

[0028] The present invention is a gallium nitride transimpedance amplifier that can be used in proton beam equipment, wherein the radiation detection module of the present invention uses a Hamamatsu H8500 photomultiplier tube to detect gamma rays in real time, and the output current of the Hamamatsu H8500 photomultiplier tube passes through After the detector, it can be converted to voltage.

[0029] It is an object of the invention wherein the bandwidth of the circuit is in the range of 0 to 200 megahertz (MHz).

[0030] It is an object of the present invention, wherein the noise generated by the circuit is 64.6 microvolts in the aforementioned circuit bandwidth range of 0 to 200 megahe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a gallium nitride amplifier circuit which serves as a basic electronic circuit for proton beam therapy and has a function of receiving a plurality of currents and a function of outputting a plurality of voltages. The gallium nitride can tolerate radiation generated during proton beam treatment, so that the gallium nitride can be used as an electronic circuit of proton beam equipment, has high reliability and can improve the reliability of the whole system.

Description

technical field [0001] The invention provides a gallium nitride amplifier, in particular a gallium nitride transimpedance amplifier that can be used in proton beam equipment. Background technique [0002] Traditionally, proton beam therapy (Proton beam therapy) equipment is a kind of proton accelerator. Its main medical application field is the radiation treatment of cancer tumors. During the actual cancer tumor treatment, the proton beam will be aimed at the patient The position of the tumor, through the Bragg spike phenomenon that releases most of the energy through the protons carrying energy at a specific depth, a large amount of energy is released in the tumor (cancer focus area), so as to destroy the cancer cells in the tumor without destroying Other normal cells other than tumors. [0003] From the above, it can be seen that proton beam therapy has significant advantages over conventional radiotherapy, because compared with traditional treatment methods, the retained...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): A61N5/10H03F3/08
CPCA61N5/103H03F3/08A61N2005/1087A61N2005/1092H03F3/193H03F2200/451H03F3/345H03F1/086H03F1/10H01L29/2003G01T1/17
Inventor 陈始明潘莫斐
Owner CHANG GUNG UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products