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Evaluation and monitoring method for deep charging risk of medium in satellite

A deep charging and satellite technology, applied in data processing applications, instruments, calculations, etc., can solve the problems of continuous monitoring and evaluation, inability to effectively evaluate the bad condition, excessive or insufficient internal medium charging of satellites, etc., to improve user experience and risk The effect of convenient monitoring and accurate evaluation results

Pending Publication Date: 2022-04-26
NAT SATELLITE METEOROLOGICAL CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the prior art, the assessment of the deep charging of the satellite’s internal medium is usually unable to effectively assess the harsh situation of the satellite’s internal medium charging, and it is easy to cause excessive or insufficient assessment of the harm of deep charging to the satellite, and it is also impossible to realize the continuous monitoring of the risk of deep charging and evaluation

Method used

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  • Evaluation and monitoring method for deep charging risk of medium in satellite
  • Evaluation and monitoring method for deep charging risk of medium in satellite
  • Evaluation and monitoring method for deep charging risk of medium in satellite

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Embodiment 1

[0041] This embodiment provides a method for assessing and monitoring the risk of deep charging of the satellite internal medium, referring to figure 1 and figure 2 , the method includes the following steps:

[0042] Step S10, Obtain the surface electron flux F of the two energy channels of the internal medium of the satellite to be measured 1 , F 2 , and respectively the surface electron flux F 1 , F 2 and the commonly used standard energy value E 1 =0.8MeV and E 2 =2MeV is substituted into the differential spectrum formula of high-energy electrons: F=AE B (1) Calculate the high energy electron spectrum parameters A and B.

[0043] Specifically, the differential energy spectrum formula of high-energy electrons: F=AE B (1)

[0044] Middle F is the high-energy electron flux with energy E on the orbit, and the unit is cm -2 the s -1 sr -1 MeV -1 , the unit of E is MeV, and A and B are constants.

[0045] Generally, the standard high-energy electron data usually gi...

Embodiment 2

[0095] On the basis of the first embodiment above, the embodiment of the present invention provides another method for evaluating and monitoring the risk of deep charging of the internal medium of the satellite. The method of this embodiment first adopts the same method as that of the first embodiment to conduct As for the assessment of the risk of deep charging, the specific process will not be repeated here.

[0096] In the process of implementation, it needs to be explained that when obtaining the total electron flux F incident on the satellite internal medium at the first observation moment, the initial charging voltage U of the given satellite internal medium 1 =U 0 . A large number of experiments have proved that after a certain period of time, the actual charging voltage is only related to the incident electron flux, so the initial voltage can be within a reasonable range.

[0097] In a preferred embodiment, it also includes continuously monitoring the charging voltag...

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Abstract

The invention provides a satellite internal medium deep charging risk assessment and monitoring method, which comprises the following steps of: estimating a high-energy electron spectrum parameter through actually measured electron flux and a common standard energy value, dividing 24 hours into a plurality of preset moments, acquiring energy of high-energy electrons of two different energy channels at the preset moments, and calculating to obtain surface electron flux; obtaining the shielding thickness of the internal medium, calculating the lower limit Emin of energy for deposition according to the statistical relationship between the maximum range of electrons and energy, calculating the critical thickness of the internal medium for electron deposition, and calculating the upper limit Emax of energy for deposition according to the conditional inequality of the critical thickness and the upper limit of energy, and acquiring the area S of the satellite circuit board and the resistance R of the internal medium, and calculating a voltage value U of a predetermined level according to the area S, the resistance R, the lower energy limit Emin, the upper energy limit Emax, the voltage value and a voltage value formula. Effective assessment and continuous monitoring of the satellite deep charging risk are realized, and the assessment is more accurate and efficient.

Description

technical field [0001] The invention relates to the technical field of satellite internal dielectric charging, in particular to a method for evaluating and monitoring the risk of deep charging of satellite internal dielectrics. Background technique [0002] There are a large number of application satellites operating in the earth's space orbit. Since they are always in the outer radiation belt, space high-energy electrons will not only cause radiation dose effects on the satellites, but also penetrate the satellite skin and deposit in the satellite's internal insulating materials or non-grounded conductors. And the charging phenomenon occurs, that is, the deep charging of the satellite takes place. The deep charging of the satellite will be like the electrostatic charge on the ground. When a certain tolerance value is exceeded, a discharge will occur, just like the electrostatic discharge on the ground. During the discharge, a large amount of charge and electromagnetic waves...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06Q10/06G06Q50/06
CPCG06Q10/0635G06Q10/0639G06Q50/06
Inventor 薛炳森郭建广周颜
Owner NAT SATELLITE METEOROLOGICAL CENT
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