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Back incidence AlGaN-based solar blind detector with high rejection ratio

A back-incidence, high-suppression technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of poor suppression ratio, sunlight interference, etc., and achieve the effects of suppressed response, compatible preparation process, and guaranteed quantum efficiency

Pending Publication Date: 2022-04-19
苏州镓敏光电科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The invention provides a back-incidence AlGaN-based solar-blind detector with a high rejection ratio, aiming to solve the problem that the current AlGaN-based solar-blind detector has a poor rejection ratio and is seriously interfered by sunlight

Method used

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  • Back incidence AlGaN-based solar blind detector with high rejection ratio
  • Back incidence AlGaN-based solar blind detector with high rejection ratio
  • Back incidence AlGaN-based solar blind detector with high rejection ratio

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Embodiment 1

[0030] like figure 1 As shown, a back-incidence AlGaN-based solar-blind detector with a high rejection ratio is prepared on a sapphire substrate, and includes: a UVC filter film 101, a sapphire substrate 102, and an i-type AlN buffer layer from bottom to top. 103, i-type AlGaN transition layer 104, heavily doped n-type Al y Ga 1-y N ohmic contact layer 105, n-type Al with low doping concentration x Ga 1-x N light absorbing layer 106, n-type Schottky metal electrode 108 and metal pad 109; the top periphery of i-type AlGaN transition layer 104 is beyond the heavily doped n-type Al y Ga 1-y The bottom periphery of the N ohmic contact layer 105 forms a ring-shaped electrode area, and the n-type ohmic contact electrode 7 is arranged on the ring-shaped electrode area, which is ring-shaped, and the metal pad 109, the n-type Schottky metal electrode 108, and the n-type with low doping concentration al x Ga 1-x N light absorbing layer 106 and heavily doped n-type Al y Ga 1-y A...

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Abstract

The invention discloses a back incidence AlGaN-based solar blind detector with a high rejection ratio, which is characterized in that a UVC filter film is plated on the back surface of a sapphire substrate, and the cut-off wavelength range of the UVC filter film is 280nm-400nm. According to the back incidence AlGaN-based solar blind detector with the high rejection ratio, the defects that an existing AlGaN-based solar blind detector is low in rejection ratio and has weak response in UVA and UVB are overcome, practice verifies that the AlGaN-based solar blind detector with the high rejection ratio is compatible with a conventional AlGaN-based solar blind detector in preparation technology, the quantum efficiency of a solar blind wave band is guaranteed, and meanwhile, the solar blind wave band is made to have a wide application range. And the response of the AlGaN-based solar blind ultraviolet detector in the UVA and UVB wave bands is further inhibited.

Description

technical field [0001] The invention relates to a back-incidence AlGaN-based solar-blind detector with high rejection ratio, belonging to the technical field of semiconductor solar-blind photodetection devices. Background technique [0002] Ultraviolet radiation is the strongest radiation in nature. Its wavelength ranges from 200nm to 400nm. According to the wavelength range, it can be divided into three types: UVA (400nm-320nm), UVB (320nm-290nm), and UVC (280nm-200nm). band range. Sunlight is an important source of ultraviolet light on the earth's surface. Due to the absorption of the atmospheric ozone layer, there is a spectral blind zone of 240-280nm in the radiation of sunlight reaching the ground, which is called "solar blind zone". Affected by the solar background radiation, it has high sensitivity and signal-to-noise ratio, and has important applications in fire alarm, missile tail flame detection and tracking and other fields. [0003] The core device of the ultra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/108H01L31/18
CPCH01L31/02162H01L31/1085H01L31/1848
Inventor 周东陆海
Owner 苏州镓敏光电科技有限公司
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