Graphene production device and method

Abstract

The invention provides a graphene production device and method.The device comprises a furnace cover and an electric induction furnace, the electric induction furnace comprises a furnace body and an induction coil copper pipe, the furnace body is made of furnace lining ramming materials, the induction coil copper pipe surrounds the outer side of the furnace body, and high-purity carbon bricks are built on the inner wall of a hearth of the electric induction furnace. Air bricks are arranged at the bottom of the furnace body, and a collecting pipeline is arranged on the furnace cover. According to the graphene production device and method, semi-continuous production of graphene can be achieved, and the prepared graphene is directly blown out through inert gas, easy to collect and convenient to transfer.

Description

technical field [0001] The invention relates to the field of graphene production, in particular to a device and method for producing graphene. Background technique [0002] Graphene has an ideal two-dimensional crystal structure of single atomic layer, which is composed of hexagonal lattice. This special structure endows graphene materials with unique thermal, mechanical and electrical properties. At present, graphene has been applied to lithium-ion battery electrode materials, supercapacitors, solar cell electrode materials, hydrogen storage materials, sensors, optical materials, drug carriers, etc., demonstrating the broad application prospects of graphene materials. [0003] The excellent properties and wide application prospects of graphene have greatly promoted the rapid development of graphene preparation technology. Since Geim et al first prepared graphene by micromechanical exfoliation in 2004, researchers have developed many methods for preparing graphene. Among t...

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Problems solved by technology

However, its controllability is poor, and the size of the prepared graphene is small and there is a lot of uncertainty. At the same time, the efficiency is low and the cost is high, so it is not suitable for large-scale production.

[0015] (2) Large-area graphene can be prepared by SiC pyrolysis epitaxial growth method, and the quality is high, but the preparation conditions are relatively harsh, and it must be carried out under high temperature and high vacuum conditions, and the price of SiC is also relatively expensive, and the obtained Graphene sheets are not easily transferred from SiC

[0016] (3) The thickness of graphene prepared by CVD method is difficult to control, and only a small part of the available carbon is converted into graphene during the precipitation process, and the transfer process of graphene is complicated, and the preparation cost is high. In addition, C growth inside the substrate Connections with often flawed

[0017] (4) When preparing by oxidation-reduction method, because single-layer graphene is very thin, it is easy to agglomerate, resulting in the reduction of the electrical conductivity and specific surface area of ​​graphene, which further affects its application in optoelectronic devices. In addition, the disadvantages of redox method It is the macro-preparation that is easy to cause waste liquid pollution and the prepared graphene has certain defects, such as topological defects such as five-membered rings and seven-membered rings or structural defects of -OH groups, which will lead to partial electrical properties of graphene. The loss of graphene limits the application of

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