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Method for preparing ITO (Indium Tin Oxide) film based on magnetron sputtering and etching treatment

A magnetron sputtering and thin film technology, applied in the field of preparing ITO thin films based on magnetron sputtering and etching treatment, to achieve the effects of reducing environmental pollution, stable sputtering environment and single phase

Pending Publication Date: 2022-04-12
福建富兰光学股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the base film of a flexible transparent conductive film, in addition to high light transmittance and conductivity, it also needs to have good flexibility and mechanical strength, and the ITO film prepared by the traditional process does not have this feature

Method used

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  • Method for preparing ITO (Indium Tin Oxide) film based on magnetron sputtering and etching treatment
  • Method for preparing ITO (Indium Tin Oxide) film based on magnetron sputtering and etching treatment
  • Method for preparing ITO (Indium Tin Oxide) film based on magnetron sputtering and etching treatment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Example 1 (see figure 2 shown)

[0040] 1. Clean the glass substrate first: immerse the glass substrate in detergent, deionized water, ethanol, and acetone solution in sequence, then clean it in a plasma cleaner, and dry it with nitrogen;

[0041] 2. Place the cleaned glass substrate on a spin coater, and spin coat PS pellets with a mass fraction of 10ωt% on the glass substrate at 2500r / min for 15s;

[0042] 3. Place the above-mentioned substrate spin-coated with a layer of PS spheres in a plasma etching device, and etch for 2 minutes with a power of 60w;

[0043] 4. Place the processed substrate in the magnetron sputtering studio, use the magnetron sputtering coating system, and pump the background vacuum of the sputtering system to less than 5.0pa;

[0044] 5. Sputtering gas Ar bombards the target through the magnetron sputtering coating machine,

[0045] The sputtering gas uses argon with a purity of 99.9%;

[0046] The target material is an ITO target with a pu...

Embodiment 2

[0052] 1. Clean the glass substrate first: immerse the glass substrate in detergent, deionized water, ethanol, and acetone solution in sequence, then clean it in a plasma cleaner, and dry it with nitrogen;

[0053] 2. Place the cleaned glass substrate on a spin coater, and spin coat PS pellets with a mass fraction of 10ωt% on the glass substrate at 2500r / min for 15s;

[0054] 3. Place the above-mentioned substrate spin-coated with a layer of PS spheres in a plasma etching device, and etch for 1 min with a power of 60w;

[0055] 4. Place the processed substrate in the magnetron sputtering studio, use the magnetron sputtering coating system, and pump the background vacuum of the sputtering system to less than 5.0pa;

[0056] 5. Sputtering gas Ar bombards the target through the magnetron sputtering coating machine,

[0057] The sputtering gas uses argon with a purity of 99.9%;

[0058] The target material is an ITO target with a purity of 99.8%;

[0059] The working air pressu...

Embodiment 3

[0063] 1. Clean the glass substrate first: immerse the glass substrate in detergent, deionized water, ethanol, and acetone solution in sequence, then clean it in a plasma cleaner, and dry it with nitrogen;

[0064] 2. Place the cleaned glass substrate on a spin coater, and spin coat PS pellets with a mass fraction of 10ωt% on the glass substrate at 2500r / min for 15s;

[0065] 3. Place the above-mentioned substrate spin-coated with a layer of PS beads in the plasma etching equipment, and etch for 3 minutes with a power of 60w;

[0066] 4. Place the processed substrate in the magnetron sputtering studio, use the magnetron sputtering coating system, and pump the background vacuum of the sputtering system to less than 5.0pa;

[0067] 5. Sputtering gas Ar bombards the target through the magnetron sputtering coating machine,

[0068] The sputtering gas uses argon with a purity of 99.9%;

[0069] The target material is an ITO target with a purity of 99.8%;

[0070] The working air...

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Abstract

The invention provides a method for preparing an ITO film based on magnetron sputtering and etching treatment, and the method comprises the following steps: S1, rotating a substrate, and cleaning the surface of the substrate through clean water; s2, uniformly spin-coating polystyrene microspheres on the surface of the substrate; s3, performing oxygen plasma etching operation on the polystyrene microspheres to improve the sizes of the polystyrene microspheres; s4, sputtering an ITO target material on the surface of the substrate under a vacuum condition to form an ITO thin film, and depositing for a period of time; and step S5, putting the ITO film in a toluene solution for ultrasonic treatment so as to etch the polystyrene microspheres, and finally obtaining the ITO film, thereby realizing the preparation of the ITO film.

Description

technical field [0001] The invention relates to the technical field of transparent conductive thin films, in particular to a method for preparing ITO thin films based on magnetron sputtering and etching. Background technique [0002] Transparent conductive film refers to a film that is transparent in the visible light range and has conductive properties. It plays an important role in the fields of thin-film solar cells, organic light-emitting diodes, smart home appliances, and automotive electronics. Indium Tin Oxide (Indium TinOxide) thin film is a heavily doped, highly degenerate n-type semiconductor, referred to as ITO thin film. In 1968, after the Philips company first prepared a film with excellent light transmission and conductivity properties, this material became the mainstream of transparent conductive materials. Indium tin oxide thin film has a series of unique properties, such as high transmittance of visible light; good electrical conductivity and processing per...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/02C23C14/08C23C14/58
Inventor 陈桂林章学堤黄庆许德
Owner 福建富兰光学股份有限公司
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