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A kind of etching method for single-sided germanium wafer

A wafer, single-sided technology, applied in the field of germanium wafer processing, can solve the problems of germanium wafer surface damage, germanium wafer grinding and thinning processing efficiency, increase the surface roughness of germanium wafers, etc., to achieve increased stability, good cleaning effect, The effect of improving the cooling effect

Active Publication Date: 2022-05-17
BEIJING TONGMEI XTAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method is inefficient in grinding and thinning the germanium wafer, and also causes surface damage and defects to the germanium wafer, increasing the roughness of the germanium wafer surface

Method used

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  • A kind of etching method for single-sided germanium wafer
  • A kind of etching method for single-sided germanium wafer

Examples

Experimental program
Comparison scheme
Effect test

preparation example I-1

[0051] An acid etching solution, the acid-resistant cationic surfactant is octadecyltrimethylammonium chloride; the mass fraction of concentrated hydrofluoric acid is 35%, the mass fraction of concentrated nitric acid is 60%; the mass fraction of glacial acetic acid is 99% %.

[0052] The acid etching solution is prepared by the following methods:

[0053] Add 90kg of concentrated hydrofluoric acid and 10kg of glacial acetic acid to 10kg of concentrated nitric acid, stir for 3min, then add 40kg of water, continue to stir for 5min, cool down to 25°C, then add 0.5kg of acid-resistant cationic surfactant, and continue to stir for 10min, It was left to stand for 20 minutes to obtain an acid etching solution.

preparation example I-2

[0055] An acid etching solution, which is different from Preparation Example I-1 in that the raw materials of the acid-resistant cationic surfactant are different, and the rest are the same. And, the acid-resistant cationic surfactant is a mixture of octadecyltrimethylammonium chloride and octadecylamine acetate, and octadecyltrimethylammonium chloride, octadecylamine acetate The weight ratio is 1:1.

preparation example I-3

[0057] An acid etching solution, which is different from Preparation Example I-1 in that the raw materials of the acid-resistant cationic surfactant are different, and the rest are the same. And, the acid-resistant cationic surfactant is a mixture of octadecyltrimethylammonium chloride, dioctadecyldimethylammonium chloride, octadecylamine acetate, and octadecyltrimethylammonium chloride. The weight ratio of ammonium chloride, dioctadecyldimethylammonium chloride and octadecylamine acetate is 1.5:3:1.5.

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Abstract

This application relates to the technical field of germanium wafer processing, and specifically discloses an etching method for a single-sided germanium wafer, which includes the following steps: setting a photoresist film on the back surface and the circumferential direction of the germanium wafer; The front of the germanium wafer is soaked and corroded, and the front of the germanium wafer is subjected to a longitudinal cut and thinning treatment under continuous spraying of acid etching solution; under continuous spraying of the diversion liquid, the front of the germanium wafer is subjected to a second longitudinal cut and thinning treatment , Grinding and leveling treatment; removing the photoresist film; the diversion liquid is made of the following raw materials: graphene powder, amphoteric surfactant, nonionic surfactant, ammonium fluoride, silane coupling agent, water. The method not only improves the thinning treatment efficiency of the germanium wafer, but also reduces the surface roughness of the germanium wafer, improves the overall performance of the thinning treatment of the germanium wafer, and satisfies the market demand.

Description

technical field [0001] The present application relates to the technical field of germanium wafer processing, and more particularly, to an etching method for single-sided germanium wafers. Background technique [0002] Germanium is one of the important indirect transition semiconductor materials. It has high electron mobility and hole mobility, and has been widely used in aerospace and other fields. Moreover, epitaxial gallium arsenide solar cells on germanium single crystal substrates have the advantages of high temperature resistance, high photoelectric conversion efficiency, strong resistance to space radiation, strong reliability, and long life. [0003] As a semiconductor substrate, germanium wafers need to go through processes such as single crystal growth, ingot processing, slicing, chamfering, grinding, polishing, cleaning, and passivation. In the grinding process of germanium wafers, a grinding machine is generally used to perform batch thinning processing on the ge...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/10B24B1/00C09K3/14C30B29/08
CPCY02P70/50
Inventor 王元立陈美琳贺友华
Owner BEIJING TONGMEI XTAL TECH CO LTD
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