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PEDOT: PSS self-supporting thermoelectric film and preparation method thereof

A thermoelectric thin-film, self-supporting technology, applied in the manufacture/processing of thermoelectric devices, and lead-out materials for thermoelectric device junctions. performance, improved conductivity, low cost

Inactive Publication Date: 2022-03-22
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, some methods for improving the thermoelectric performance of PEDOT:PSS thin films have been reported in the literature, such as utilizing strong acid (sulfuric acid, nitric acid, etc.), strong base (sodium hydroxide, etc.), and strong reducing agent (hydrazine hydrate, sodium borohydride, etc.) to carry out post-treatment, However, these reagents have strong stimulating and corrosive effects, and are harmful to the human body and the environment. This may cause a loss of device life in the subsequent design of flexible thermoelectric devices, and the use of strong reducing agents will also greatly reduce PEDOT:PSS Conductivity of the film

Method used

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  • PEDOT: PSS self-supporting thermoelectric film and preparation method thereof
  • PEDOT: PSS self-supporting thermoelectric film and preparation method thereof
  • PEDOT: PSS self-supporting thermoelectric film and preparation method thereof

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preparation example Construction

[0030] A kind of high-performance PEDOT of the present invention: The preparation method of PSS self-supporting thermoelectric thin film comprises the following steps:

[0031] Step 1: Clean the glass substrate with deionized water, acetone, and isopropanol in sequence, and then dry it;

[0032] Step 2: Drop-coat 100-300 μL of PEDOT:PSS aqueous solution (Clevious PH1000) onto the glass substrate obtained in Step 1, place in a vacuum drying oven, and dry at 50-100°C for 8-12 hours to obtain film A;

[0033] PEDOT:PSS aqueous solution is a commercial product, the specification is Clevious PH1000, the specific information is as follows:

[0034]

[0035] Step 3: soak the film A obtained in step 2 in an organic polar solvent for 5-20 minutes, then take it out, rinse it with deionized water for 2-3 times, and dry it at 60-80°C for 10-20 minutes to obtain film B;

[0036] The organic polar solvent is ethylene glycol, formamide, N,N-dimethylformamide, sorbitol, dimethyl sulfoxide...

Embodiment 1

[0039] Step 1: Clean the glass substrate with deionized water, acetone, and isopropanol in sequence, and then dry it;

[0040] Step 2: Drop-coat 100 μL of PEDOT:PSS aqueous solution (Clevious PH1000) onto the glass substrate obtained in Step 1, place it in a vacuum drying oven, and dry at 50°C for 8 hours to obtain Film A;

[0041] Step 3: soak the film A obtained in step 2 in ethylene glycol for 5 minutes, then take it out, rinse it twice with deionized water, and dry it at 60°C for 20 minutes to obtain film B;

[0042] Step 4: Drop the L-ascorbic acid solution with a concentration of 0.5 mol / L and a volume of 200 μL on the surface of the film B obtained in Step 3 until it is completely covered, rinse it with deionized water after staying for 20 minutes, and dry it at 60°C to obtain PEDOT:PSS self- The thermoelectric thin film C is supported.

Embodiment 2

[0044] Step 1: Clean the glass substrate with deionized water, acetone, and isopropanol in sequence, and then dry it;

[0045] Step 2: Drop-coat 200 μL of PEDOT:PSS aqueous solution (Clevious PH1000) onto the glass substrate obtained in Step 1, place it in a vacuum drying oven, and dry at 60°C for 12 hours to obtain film A;

[0046]Step 3: soak the film A obtained in step 2 in formamide (analytical pure) for 15 minutes, then take it out, rinse it with deionized water for 3 times, and dry it at 80°C for 15 minutes to obtain film B;

[0047] Step 4: Drop the L-ascorbic acid solution with a concentration of 1mol / L and a volume of 200 μL on the surface of the film B obtained in Step 3 until it is completely covered, rinse it with deionized water after staying for 5 minutes, and dry at 80°C to obtain PEDOT:PSS self- The thermoelectric thin film C is supported.

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Abstract

The invention relates to a PEDOT: PSS self-supporting thermoelectric film and a preparation method thereof, and the method comprises the steps: coating a substrate with a PEDOT: PSS aqueous solution, then drying, and forming a PEDOT: PSS layer on the substrate to obtain a compound A; the compound A is soaked in an organic polar solvent, PEDOT: PSS outer wall insulation PSS is removed, a PEDOT: PSS film is formed on a substrate, then the organic polar solvent is removed, drying is conducted, and a compound B is obtained; dropwise adding an L-ascorbic acid solution on the compound B to enable the L-ascorbic acid solution to cover the upper surface layer of the compound B, then removing the L-ascorbic acid solution, drying, and removing the substrate to obtain the PEDOT: PSS self-supporting film. L-ascorbic acid is used for treating and adjusting the oxidation level of PEDOT molecules, and the coupling relation between the conductivity and Seebeck coefficient of PEDOT: PSS is tuned, so that a higher power factor is obtained.

Description

technical field [0001] The invention belongs to the field of preparation of flexible thermoelectric materials, in particular to a PEDOT:PSS self-supporting thermoelectric film and a preparation method thereof. Background technique [0002] Due to the advantages of high electrical conductivity, low thermal conductivity, low price, and simple preparation method, conductive polymers have become high-value thermoelectric materials. Poly(3,4-dioxyethylenethiophene) (PEDOT for short) is one of the most promising conductive polymers. PEDOT itself is an insoluble polymer, which limits its practical application. A water-soluble, uniformly dispersed aqueous dispersion can be obtained by doping with a water-soluble polymer electrolyte polystyrene sulfonic acid (PSS). That is, PEDOT:PSS aqueous solution. PEDOT:PSS has become a hotspot in the field of organic thermoelectric materials due to its low intrinsic thermal conductivity, easy control of electrical properties, excellent environ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/34H01L35/24H10N10/01H10N10/856
CPCH10N10/856H10N10/01
Inventor 张荔张杰刘星宇杨艳玲侯小江叶晓慧锁国权夏斌杰
Owner SHAANXI UNIV OF SCI & TECH
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