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Preparation method of semiconductor high-purity titanium target material assembly

A titanium target and semiconductor technology, which is applied in the field of sputtering targets, can solve the problems of affecting the stability of the process and equipment, poor cooling effect, easy deformation, etc. The effect of using the cycle

Pending Publication Date: 2022-02-15
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The backplane usually plays the role of supporting the target, cooling down, and reducing costs. The quality of the backplane directly affects the stability of the process and equipment. In traditional operations, water is usually placed behind the copper backplane for cooling. The high heat on the surface of the target during coating is introduced into the cooling water behind the backplane, but this traditional cooling method cannot effectively guide the high surface heat during coating into the cooling water behind the backplane, and reduce the temperature of the target in time
Most of the traditional backplanes have no internal water tanks, short service life, and poor cooling effect, and the backplanes are affected by high temperature and high pressure during use, and are prone to deformation, which affects the repeated use of the backplanes
[0003] CN211689221U discloses a back plate and a target material with an internal water channel groove, the back plate includes a base plate and a cover plate, the water channel groove is sealed between the base plate and the cover plate; the water channel groove is arranged on the base plate, surrounds the center of the base plate and folds and extends A groove structure with two rings of water channels is formed. The target back plate has only undergone heat treatment once during the preparation process, and the welding method of the bottom plate and the cover plate is electron beam welding, which has limited improvement on the problem that the target back plate is easily deformed by heating.
This method uses hot isostatic pressing welding, and the process is relatively cumbersome

Method used

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  • Preparation method of semiconductor high-purity titanium target material assembly
  • Preparation method of semiconductor high-purity titanium target material assembly

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] This embodiment provides a method for preparing a semiconductor high-purity titanium target assembly, the high-purity titanium target assembly includes a titanium target 3 and a back plate, the back plate includes a cover plate 2 and a substrate 1, and the substrate 1 is provided with a cooling water channel 11, and the structural schematic diagram of the substrate 1 is as follows figure 1 As shown, the preparation method comprises the following steps;

[0060] (1) The substrate 1 and the cover plate 2 are independently forged and stretched three times at 450°C, and then water-cooled once; after the first water-cooling, they are kept at 360°C for 100°C, and then rolled; Under the condition of keeping warm for 150min, then carry out secondary water cooling;

[0061] After the secondary water cooling, the base plate 1 and the cover plate 2 were polished independently. After polishing, the surface was first cleaned with acetone, and then ultrasonically cleaned with isopro...

Embodiment 2

[0067] This embodiment provides a method for preparing a semiconductor high-purity titanium target assembly, the high-purity titanium target assembly includes a titanium target 3 and a back plate, the back plate includes a cover plate 2 and a substrate 1, and the substrate 1 is provided with a cooling water channel 11, and the preparation method includes the following steps;

[0068] (1) The base plate 1 and the cover plate 2 are independently forged twice at 550°C, and then water-cooled once; after the first water cooling, they are kept at 320°C for 130 minutes, and then rolled; Under the condition of keeping warm for 170min, then carry out secondary water cooling;

[0069] After the secondary water cooling, the base plate 1 and the cover plate 2 were polished independently. After polishing, the surface was first cleaned with acetone, and then ultrasonically cleaned with isopropanol, and dried at 70°C after cleaning;

[0070] (2) Assemble the cover plate 2 and base plate 1 p...

Embodiment 3

[0074] This embodiment provides a method for preparing a semiconductor high-purity titanium target assembly, the high-purity titanium target assembly includes a titanium target 3 and a back plate, the back plate includes a cover plate 2 and a substrate 1, and the substrate 1 is provided with a cooling water channel 11, and the preparation method includes the following steps;

[0075] (1) The base plate 1 and the cover plate 2 are independently forged twice at 500°C, and then water-cooled once; after the first water cooling, they are kept at 330°C for 150 minutes, and then rolled; Insulated for 300min under certain conditions, and then subjected to secondary water cooling;

[0076] After the secondary water cooling, the base plate 1 and the cover plate 2 are polished independently. After polishing, the surface is firstly cleaned with acetone, and then ultrasonically cleaned with isopropanol, and dried at 50°C after cleaning;

[0077] (2) Assemble the cover plate 2 and base pla...

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Abstract

The invention provides a preparation method of a semiconductor high-purity titanium target material assembly. The preparation method comprises the following steps: independently and sequentially subjecting a cover plate and a substrate provided with a cooling water channel to forging stretching, primary heat treatment, calendering and secondary heat treatment; assembling the treated cover plate and the substrate, and performing friction stir welding to obtain a back plate; and assembling the obtained back plate and a titanium target material, fixing the titanium target material through a clamp, and then performing brazing to obtain a high-purity titanium target material assembly. According to the preparation method, by optimizing the heat treatment process and the welding mode in the preparation process, the welding binding rate of the target material assembly is effectively increased, the optimized back plate can be repeatedly used, and cost reduction is facilitated.

Description

technical field [0001] The invention belongs to the technical field of sputtering targets, and in particular relates to a method for preparing semiconductor high-purity titanium target components. Background technique [0002] In the field of semiconductors, magnetron sputtering coating is a high-efficiency coating method. The target material involved in sputtering is usually processed by welding the target blank and the back plate. The backplane usually plays the role of supporting the target, cooling down, and reducing costs. The quality of the backplane directly affects the stability of the process and equipment. In traditional operations, water is usually placed behind the copper backplane for cooling. The high heat on the surface of the target during coating is introduced into the cooling water behind the back plate, but this traditional cooling method cannot effectively guide the high surface heat during coating into the cooling water behind the back plate, so as to lo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23P15/00
CPCB23P15/00
Inventor 姚力军潘杰王学泽边逸军冯周瑜杨广
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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