Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

LED epitaxial structure and preparation method thereof

An epitaxial structure and structure layer technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of reducing the injection efficiency and luminous efficiency of light-emitting diodes, high junction temperature of LED chips, lattice mismatch, etc., to reduce internal reflection. Loss, performance improvement, effect of reducing operating voltage

Pending Publication Date: 2022-02-08
XIAMEN SILAN ADVANCED COMPOUND SEMICON CO LTD
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Long-term aging under high temperature and high current will lead to excessively high junction temperature of the LED chip. Due to the slight lattice mismatch between the epitaxial structure layers, a large number of structural defects such as dislocations will be formed on the interface between the layers.
At higher temperatures, these defects will rapidly proliferate and multiply until they invade the light-emitting area and form a large number of non-radiative recombination centers, which seriously reduce the injection efficiency and luminous efficiency of the light-emitting diode.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • LED epitaxial structure and preparation method thereof
  • LED epitaxial structure and preparation method thereof
  • LED epitaxial structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] figure 1 It is a structural schematic diagram of the LED epitaxial structure of this embodiment. refer to figure 1 , the LED epitaxial structure includes from bottom to top: a bottom buffer layer 102 on the substrate 101, an etch stop layer 103, a first-type semiconductor layer, an active layer 204, and a second-type semiconductor layer, wherein the first The semiconductor layer includes a first-type window layer 202 and a first-type confinement layer 203 from bottom to top, and the first-type window layer 202 is a structural layer with a graded Al composition.

[0049] The first type semiconductor layer further includes a first type ohmic contact layer 201 , and the first type ohmic contact layer 201 is located between the etching stop layer 103 and the first type window layer 202 .

[0050] The second-type semiconductor layer includes, from bottom to top, a second-type confinement layer 205 , a second-type window layer 206 and a second-type ohmic contact layer 207 ....

Embodiment 2

[0084] figure 2 It is a structural schematic diagram of the first type window layer of this embodiment. The difference between this embodiment and the first embodiment is only that the structure of the first-type window layer 202 is different, and the parts with the same structure will not be repeated here.

[0085] Specifically, the first-type window layer 202 in the LED epitaxial structure includes a two-layer structure composed of the first structure layer 2021 and the second structure layer 2022 or a structure composed of the first structure layer 2021 and the second structure layer 2022 stacked alternately. In the multi-period structure, the period number k ranges from 2 to 30, preferably 20-30. Such as figure 2 As shown, the first-type window layer 202 includes a two-layer structure composed of a first structural layer 2021 and a second structural layer 2022 . The material of the first structural layer 2021 is Al a Ga 1-a As, the material of the second structural ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Total thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides an LED epitaxial structure and a preparation method thereof. The LED epitaxial structure sequentially comprises a bottom buffer layer, a corrosion cut-off layer, a first type semiconductor layer, an active layer and a second type semiconductor layer from bottom to top, wherein the bottom buffer layer, the corrosion cut-off layer, the first type semiconductor layer, the active layer and the second type semiconductor layer are located on a substrate, the first type semiconductor layer sequentially comprises a first type window layer and a first type limiting layer from bottom to top, the first type window layer is made of AlGaAs and is a structural layer with an Al component being gradually changed, and the thickness of the first type window layer is 1.5 microns to 8 microns. The light emitting efficiency of the LED chip can be improved, the working voltage of the LED chip can be reduced and the high-temperature aging stability of the LED chip can be improved by forming the first type window layer with the Al component being gradually changed.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an LED epitaxial structure and a preparation method thereof. Background technique [0002] Light Emitting Diode (LED, Light Emitting Diode) is a semiconductor solid light-emitting device, which has the advantages of simple structure, light weight, and no pollution. It has been widely used in many fields such as digital, display, lighting, and plant engineering. It is called environmental protection , Energy-saving green lighting source, contains huge business opportunities. Among them, the infrared light-emitting diode is an important light-emitting diode, which is widely used in remote control, vehicle sensing, closed-circuit television and other fields. The epitaxial structure of the infrared light-emitting diode is the basic structure for preparing the infrared light-emitting diode. [0003] Long-term aging under high temperature and high current will lead to excessive...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/30H01L33/12H01L33/14H01L33/00
CPCH01L33/30H01L33/12H01L33/14H01L33/0062
Inventor 廖寅生李森林毕京锋王亚宏
Owner XIAMEN SILAN ADVANCED COMPOUND SEMICON CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com