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Method for preparing two-dimensional material Ti3C2 by taking Ti3SiC2 as precursor

A technology of two-dimensional materials and precursors, applied in the direction of carbide, titanium carbide, etc., can solve the problems of harsh conditions of two-dimensional materials, and achieve the effects of low cost, abundant synthesis methods, and controllable preparation process

Pending Publication Date: 2022-01-18
CHUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Technical problem to be solved by the present invention: solve Ti 3 C 2 Problems such as harsh conditions in the preparation process of two-dimensional materials

Method used

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  • Method for preparing two-dimensional material Ti3C2 by taking Ti3SiC2 as precursor
  • Method for preparing two-dimensional material Ti3C2 by taking Ti3SiC2 as precursor
  • Method for preparing two-dimensional material Ti3C2 by taking Ti3SiC2 as precursor

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Embodiment 1: according to the following method with Ti 3 SiC 2 Preparation of two-dimensional material Ti as precursor 3 C 2 :

[0025] 1) Grind the titanium-silicon-carbon powder, sieve it to 200 mesh, place it in an alumina ark, spread it flat, raise the temperature to 550°C in a muffle furnace at a heating rate of 5°C / min, keep it warm for 3 hours, and then cool down with the furnace. As the furnace cools down, under the action of this oxidation temperature and holding time, the energy is high enough to make oxygen in the air enter the titanium-silicon-carbon lattice and interact with silicon atoms, weakening the Ti 3 SiC 2 The binding force of Ti-Si. The purity of titanium silicon carbon powder is >95%.

[0026] 2) Weigh 1 g of the powder obtained after oxidation, place it in 20 ml of HF solution with magnetic stirring, and heat in a water bath. The temperature of the water bath is 60° C., the time is 48 hours, and the concentration of hydrofluoric acid is 4...

Embodiment 2

[0030] Embodiment 2: according to the following method with Ti 3 SiC 2 Preparation of two-dimensional material Ti as precursor 3 C 2 :

[0031] 1) Grind the titanium silicon carbon powder, sieve 400 mesh, place it in an alumina ark, spread it flat, raise the temperature to 500°C in a muffle furnace at a heating rate of 8°C / min, keep it for 5 hours, and cool down with the furnace. The purity of titanium silicon carbon powder is >95%.

[0032] 2) Weigh 1 g of the powder obtained after oxidation, place it in 20 ml of HF solution with magnetic stirring, and heat in a water bath. The temperature of the water bath is 50°C, the time is 56 hours, the concentration of hydrofluoric acid is 35wt%, and it can float slightly down to 30wt%.

[0033] 3) Wash the mixed solution heated in a water bath with deionized water, centrifuge at 2500rpm, pour the upper layer solution until the pH value of the upper layer solution reaches 5-7, preferably 6, and continue to pour the deionized water ...

Embodiment 3

[0036] Embodiment 3: according to the following method with Ti 3 SiC 2 Preparation of two-dimensional material Ti as precursor 3 C 2 :

[0037] 1) Grind the titanium silicon carbon powder, sieve 300 mesh, place it in an alumina ark, spread it flat, raise the temperature to 580°C in a muffle furnace at a heating rate of 6°C / min, keep it for 2 hours, and cool down with the furnace. The purity of titanium silicon carbon powder is >95%.

[0038] 2) Weigh 1 g of the powder obtained after oxidation, place it in 20 ml of HF solution with magnetic stirring, and heat in a water bath. The temperature of the water bath is 80°C, the time is 72 hours, the concentration of hydrofluoric acid is 45wt%, and it can float slightly to 49wt%.

[0039] 3) Wash the mixed solution heated in a water bath with deionized water, centrifuge at 5000rpm, pour the upper layer solution until the pH value of the upper layer solution reaches 5-7, preferably 6, continue to pour the deionized water into the ...

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Abstract

The invention discloses a method for preparing a two-dimensional material Ti3C2 by taking Ti3SiC2 as a precursor, and the specific scheme is as follows: the precursor material Ti3SiC2 is firstly pre-oxidized at low temperature for a period of time, and then is etched in an HF chemical environment to prepare the two-dimensional material Ti3C2. The method is simple and easy to implement, the synthesis method of the Ti3C2 two-dimensional material is enriched, the cost of the adopted precursor raw material is lower, the preparation process is controllable, and the synthesized material can be applied to the fields of supercapacitors, batteries, catalysis and the like.

Description

technical field [0001] The invention belongs to the field of nanomaterial preparation, more specifically, the invention relates to a method for preparing Ti 3 C 2 A technical approach to 2D MXene materials. Background technique [0002] Ti 3 C 2 It is a kind of graphene-like two-dimensional structure MXene material, which was first etched by Yury Gogotsi in 2011 by HF etching precursor MAX phase Ti 3 AlC 2 prepared. After ten years of development and research, MXene materials have been proved to have potential application value in energy storage, electromagnetic shielding, catalysis, composite materials and other fields because of their unique structure, excellent properties such as electrical conductivity, surface functional group chemical activity, and hydrophilicity. [0003] Among dozens of MXene materials that have been prepared, Ti 3 C 2 It is the most widely and deeply studied one. Currently about Ti 3 C 2 In addition to the chemical environment of HF or HF...

Claims

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Application Information

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IPC IPC(8): C01B32/921
CPCC01B32/921C01P2004/20C01P2004/03C01P2002/72C01P2006/40
Inventor 朱文彬于禧辰曹馨张澳云张华
Owner CHUZHOU UNIV
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