Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Exposure method and exposure device

An exposure method and exposure device technology, which are applied in the field of lithography, can solve the problems of reduced wafer quantity, reduced exposure machine production capacity, and shortened effective exposure time of the exposure machine, so as to achieve the effect of avoiding no-load and increasing production capacity

Active Publication Date: 2022-01-07
CHANGXIN MEMORY TECH INC
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, the exposure machine sequentially exposes each wafer in the wafer group according to the preset sequence. When there is a vacant wafer in the wafer group, the vacancy No wafer is exposed on the carrier table of the exposure machine corresponding to the wafer, resulting in a shorter effective exposure time of the exposure machine, a decrease in the number of exposed wafers per unit time, and a decrease in the production capacity of the exposure machine

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Exposure method and exposure device
  • Exposure method and exposure device
  • Exposure method and exposure device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the specific implementation, structure and features of an exposure method and exposure device proposed according to the present invention will be described below in conjunction with the accompanying drawings and preferred embodiments. And its effect, detailed description is as follows.

[0023] An embodiment of the present invention provides an exposure method, which is carried out by an exposure machine. The exposure machine includes a first carrier and a second carrier, and the first carrier and the second carrier work alternately. The exposure Methods include:

[0024] Extracting the exposure rules of the first-layer graphics or front-layer graphics of each wafer in the current wafer group, the exposure rules include the correspondence between the wafer number and the carrier, wherein the sequence of the wafer number identifies the co...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an exposure method and an exposure device. The exposure method comprises the following steps: extracting an exposure rule of a first-layer pattern or a front-layer pattern of each wafer in a current wafer group, wherein the exposure rule comprises a corresponding relationship between a wafer number and a bearing table; obtaining the number of at least one vacant wafer in the current wafer group according to the actual exposure information of the current layer pattern of each wafer in the current wafer group; removing the number of at least one vacant wafer in the exposure rule of the current-layer pattern, sequentially moving the wafer numbers of the numbers of the vacant wafers forward after the corresponding arrangement sequence of the same bearing table, and supplementing the vacant positions of the numbers to obtain the exposure rule of the current-layer pattern; and exposing the current-layer pattern of each wafer in the current wafer group according to the exposure rule of the current-layer pattern. According to the technical scheme provided by the embodiment of the invention, the condition of no load of the bearing table is avoided, and the productivity of the exposure machine is improved.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of photolithography, and in particular, to an exposure method and an exposure device. Background technique [0002] The exposure machine can project the pattern on the photomask onto the substrate coated with photoresist, so that the film layer on the substrate can be patterned through subsequent developing and etching processes. At present, exposure machines have been widely used in the field of integrated circuit manufacturing. [0003] In the prior art, the exposure machine sequentially exposes the wafers in the wafer group according to the preset sequence. When there is a vacant wafer in the wafer group, no wafer is placed on the carrier table of the exposure machine corresponding to the vacant wafer. Exposure results in shorter effective exposure time of the exposure machine, a reduction in the number of exposed wafers per unit time, and a decrease in the production capacity of th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20
CPCG03F7/20G03F7/2022G03F7/70491G03F7/70425G03F7/70541G03F7/70508G03F7/70525
Inventor 周晓方
Owner CHANGXIN MEMORY TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products