Cold plasma gas phase preparation method of tin dioxide nanoparticles

A cold plasma and nanoparticle technology, applied in the direction of nanotechnology, gaseous chemical plating, metal material coating process, etc., can solve the problem of inability to obtain self-supporting nanoparticle materials with grain size, nanoparticle crystallinity, and purity. Problems such as control, difficulty in obtaining ultrafine nanoparticles, etc., to achieve the effects of short cycle time, high yield, and controllable crystallinity

Pending Publication Date: 2021-12-31
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional solid-phase methods such as mechanical ball milling are difficult to obtain ultrafine nanoparticles with uniform size <100 nm
Liquid-phase preparation methods such as hydrothermal method (Cryst.GrowthDes.2013, 13, 4, 1685–1693), sol-gel method (Physica B 2021, 613, 412987) can obtain nanoparticles with smaller sizes, but nanoparticles It is difficult to effectively control the crystallinity and purity, and the yield is not high
Gas-phase preparation methods such as chemical vapor deposition (CVD) are suitable for the preparation of SnO 2 Thin-film materials, but self-supporting nanoparticle materials with extremely small grain sizes are not available
These technical shortcomings limit the SnO 2 Applications of Nanoparticles in Semiconductor Devices and Energy Fields

Method used

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  • Cold plasma gas phase preparation method of tin dioxide nanoparticles
  • Cold plasma gas phase preparation method of tin dioxide nanoparticles
  • Cold plasma gas phase preparation method of tin dioxide nanoparticles

Examples

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Comparison scheme
Effect test

Embodiment 1

[0031] A cold plasma vapor phase preparation method of tin dioxide nanoparticles of the present invention, the specific preparation method is as follows:

[0032] (1) Turn on the vacuum pump, purge the plasma chamber and gas path with nitrogen, and evacuate to reduce the pressure in the plasma system to about 1Pa;

[0033] (2) feed argon gas into the plasma chamber, the flow rate of argon gas is 450 sccm; turn on the radio frequency source, adjust the power to 500W, and generate argon plasma;

[0034] (3) Pass O2 into the plasma chamber from the inner pipe of the intake pipe 2 , O 2 The volume flow rate of the carrier gas is 50 sccm, tin tetrachloride is continuously passed into the plasma chamber by the carrier gas, and the volume flow rate of the carrier gas is 50 sccm;

[0035] (4) Control the air pressure in the plasma chamber at 200Pa, adjust the matching box of the radio frequency source, make the load power fully match the load power, and collect the tin dioxide nanop...

Embodiment 2

[0037] A cold plasma vapor phase preparation method of tin dioxide nanoparticles of the present invention, the specific preparation method is as follows:

[0038] (1) Turn on the vacuum pump, purge the plasma chamber and gas path with nitrogen, and evacuate to reduce the pressure in the plasma system to about 1Pa;

[0039] (2) Pass into argon gas in the plasma chamber, the flow rate of argon gas is 450sccm; Turn on the radio frequency source, adjust the power to 200W, produce argon plasma;

[0040] (3) Pass O2 into the plasma chamber from the inner pipe of the intake pipe 2 , O 2 The volume flow rate of the carrier gas is 50 sccm, tin tetrachloride is continuously passed into the plasma chamber by the carrier gas, and the volume flow rate of the carrier gas is 50 sccm;

[0041] (4) Control the air pressure in the plasma chamber at 200Pa, adjust the matching box of the radio frequency source, make the load power fully match the load power, and collect the tin dioxide nanopart...

Embodiment 3

[0043] A cold plasma vapor phase preparation method of tin dioxide nanoparticles of the present invention, the specific preparation method is as follows:

[0044] (1) Turn on the vacuum pump, purge the plasma chamber and gas path with nitrogen, and evacuate to reduce the pressure in the plasma system to about 1Pa;

[0045] (2) feed argon gas into the plasma chamber, the flow rate of argon gas is 450 sccm; open the radio frequency source, adjust the power to 50W, and generate argon plasma;

[0046] (3) Pass O2 into the plasma chamber from the inner pipe of the intake pipe 2 , O 2 The volume flow rate of the carrier gas is 50 sccm, tin tetrachloride is continuously passed into the plasma chamber by the carrier gas, and the volume flow rate of the carrier gas is 50 sccm;

[0047] (4) Control the air pressure in the plasma chamber at 200Pa, adjust the matching box of the radio frequency source, make the load power fully match the load power, and collect the tin dioxide nanoparti...

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PUM

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Abstract

The invention discloses a cold plasma gas phase preparation method of tin dioxide nanoparticles, and relates to the field of new materials. The cold plasma gas phase preparation method of the tin dioxide nanoparticles is characterized by comprising the following specific steps: sequentially introducing inert gas, oxygen and a tin-containing compound into a plasma cavity to obtain the tin dioxide nanoparticles, wherein the tin-containing compound is introduced into the plasma reaction cavity through carrier gas; and the mixed gas is excited by using a radio frequency source. The crystallinity of the SnO2 nanoparticles prepared by the method is adjustable from an amorphous state to a crystalline state, the size is smaller and can reach 5 nm or below, the size distribution is more uniform, and the standard deviation of the size is smaller than 20% of the average size.

Description

technical field [0001] The invention relates to the field of new materials, in particular to a cold plasma gas phase preparation method of tin dioxide nanoparticles. Background technique [0002] Tin dioxide (SnO 2 ) is a wide bandgap (3.6eV), N-type direct bandgap semiconductor material, which has good electron transport ability and visible light transmission ability. –593) and other fields have a very wide range of uses. [0003] As we all know, the ultrafine particle technology of materials, especially the preparation of extremely small size (<5 nanometers) nanoparticles, and their unique surface effects and small size effects can endow materials with new properties and uses. Many techniques have been proposed and used for SnO 2 However, these methods have some inherent problems. Traditional solid-phase methods such as mechanical ball milling are difficult to obtain ultrafine nanoparticles of <100 nm and uniform size. Liquid-phase preparation methods such as hy...

Claims

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Application Information

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IPC IPC(8): C23C16/40C23C16/44C23C16/50B82Y40/00
CPCC23C16/407C23C16/4418C23C16/50B82Y40/00
Inventor 周述韩旭高平奇
Owner SUN YAT SEN UNIV
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