A polishing temperature control device, chemical mechanical polishing system and method

Abstract

The invention discloses a polishing temperature control device, a chemical mechanical polishing system and a method. The polishing temperature control device includes a first temperature adjustment mechanism, which includes a heat transfer roller, a mounting seat and a driving seat, and the driving seat is arranged on the polishing The machine platen of the equipment, the mounting seat is arranged on the driving seat, the heat transfer roller is cantilevered on one side of the driving seat, the outer peripheral side of the heat transfer roller is in contact with the upper side of the polishing pad, and the rotating polishing The pad drives the heat transfer roller to rotate around its axis to control the temperature of the polishing pad and the polishing liquid; the second temperature regulating mechanism is arranged in the wafer transport path to spray fluid on the passing wafer to control the temperature of the bottom surface of the wafer.

Description

technical field [0001] The invention belongs to the technical field of chemical mechanical polishing, and in particular, relates to a polishing temperature control device, a chemical mechanical polishing system and a method. Background technique [0002] The integrated circuit industry is the core of the information technology industry and plays a key role in the process of boosting the transformation and upgrading of the manufacturing industry to digitalization and intelligence. A chip is the carrier of an integrated circuit, and chip manufacturing involves process processes such as chip design, wafer manufacturing, wafer processing, electrical measurement, cutting, packaging, and testing. Among them, chemical mechanical polishing belongs to the wafer manufacturing process. [0003] Chemical mechanical polishing (Chemical Mechanical Planarization, CMP) is a global planarization of ultra-precision surface processing technology. In chemical mechanical polishing, the wafer i...

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Problems solved by technology

However, for chemical mechanical polishing, the chemical action between the chemical composition in the polishing liquid and the wafer surface needs to be carried out at a certain temperature. If the temperature is too high, the chemical action is too fast, and the chemical action and mechanical removal are out of balance, which will make the wafer Processing quality is greatly affected

[0005] In addition, during the process of moving the wafer from the loading cup to the polishing pad, there may be a temperature difference between the surface of the wafer and the surface of the polishing pad, which will cause heat loss from the polishing pad and the polishing liquid on it, and make the contact area of ​​the wafer The temperature of the polishing liquid is different from the temperature in other areas, which will also affect the polishing effect of the wafer to a certain extent

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