Polishing temperature control device and chemical mechanical polishing system and method

Abstract

The invention discloses a polishing temperature control device and a chemical mechanical polishing system and method. The polishing temperature control device comprises a first temperature adjusting mechanism and a second temperature adjusting mechanism, wherein the first temperature adjusting mechanism comprises a heat transfer roller, a mounting base and a driving base; the driving base is arranged on a machine table plate of polishing equipment, and the mounting base is arranged on the driving base; the heat transfer roller is arranged on one side of the driving base in an overhanging mode, the peripheral side of the heat transfer roller abuts against the upper side of a polishing pad, and the rotating polishing pad drives the heat transfer roller to rotate around the axis of the heat transfer roller so as to control the temperature of the polishing pad and the temperature of a polishing solution; and the second temperature adjusting mechanism is arranged in a wafer transmission path so as to spray fluid to a wafer passing through the second temperature adjusting mechanism and control the temperature of the bottom surface of the wafer.

Description

technical field [0001] The invention belongs to the technical field of chemical mechanical polishing, and in particular relates to a polishing temperature control device, a chemical mechanical polishing system and method. Background technique [0002] The integrated circuit industry is the core of the information technology industry and plays a key role in promoting the transformation and upgrading of the manufacturing industry to digital and intelligent. A chip is the carrier of an integrated circuit, and chip manufacturing involves technological processes such as chip design, wafer manufacturing, wafer processing, electrical measurement, cutting, packaging, and testing. Among them, chemical mechanical polishing belongs to the wafer manufacturing process. [0003] Chemical Mechanical Planarization (CMP) is a globally planarized ultra-precision surface processing technology. In chemical mechanical polishing, the wafer is usually attracted to the bottom surface of the carri...

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Problems solved by technology

However, for chemical mechanical polishing, the chemical action between the chemical composition in the polishing liquid and the wafer surface needs to be carried out at a certain temperature. If the temperature is too high, the chemical action is too fast, and the chemical action and mechanical removal are out of balance, which will make the wafer Processing quality is greatly affected

[0005] In addition, during the process of moving the wafer from the loading cup to the polishing pad, there may be a temperature difference between the surface of the wafer and the surface of the polishing pad, which will cause heat loss from the polishing pad and the polishing liquid on it, and make the contact area of ​​the wafer The temperature of the polishing liquid is different from the temperature in other areas, which will also affect the polishing effect of the wafer to a certain extent

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