Semiconductor device based on dummy channel and manufacturing method thereof

Abstract

The present application discloses a semiconductor device based on a dummy channel and a manufacturing method thereof. The semiconductor device includes: a semiconductor substrate having opposite first and second surfaces; an epitaxial layer disposed on the first surface; The epitaxial layer is disposed away from the well region, the first JFET region and the second JFET region in the first surface; the well region is disposed away from the source region in the surface of the semiconductor substrate; wherein, the first Both a JFET region and the second JFET region have a plurality of first ion implantation regions; in the same JFET region, a plurality of the first ion implantation regions are arranged sequentially in a first direction; the first directions are parallel on the semiconductor substrate and perpendicular to the wiring direction of the first JFET region and the second JFET region. Applying the technical solution provided by the invention, by sequentially implanting B ions in the JFET region, the electric field on the surface of the JFET can be effectively reduced, device failure can be prevented, and the conduction current capability of the device can be improved at the same time.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device based on a dummy channel and a manufacturing method thereof. Background technique [0002] For a long time, Si materials have occupied a dominant position in the semiconductor field and are used in high-temperature and high-frequency circuits. However, with the advancement of technology and the expansion of application fields, Si-based devices are becoming more and more difficult to meet the requirements of harsher environments and higher performance, so people turn their attention to wide bandgap semiconductors. SiC material is considered to be a very potential third-generation semiconductor material. SiC material has higher breakdown field strength, higher carrier saturation velocity and higher thermal conductivity than Si material, making SiC power electronic devices Compared with similar devices of Si, it has the characteristics of ...

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Problems solved by technology

However, in the existing technology, the doping of the JFET region adopts the method of central implantation, which will cause the electric field to further concentrate on the surface of the JFET region, increasing the risk of device failure

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