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FD-SOI substrate structure and device structure

A technology of FD-SOI and substrate structure, applied in electric solid devices, semiconductor devices, electrical components, etc., can solve problems such as low carrier mobility, improve hole mobility, improve device performance, and reduce leakage effect of current

Pending Publication Date: 2021-11-19
上海功成半导体科技有限公司
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a FD-SOI substrate structure and device structure and preparation method for solving the problem of the low carrier mobility of the FD-SOI device structure in the prior art. The problem

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  • FD-SOI substrate structure and device structure
  • FD-SOI substrate structure and device structure
  • FD-SOI substrate structure and device structure

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Embodiment Construction

[0041] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0042] For example, when describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic diagram is only an example, which should not limit the protection scope of the present invention. In addition, the three-dimensional space dimensions of length, width and depth sho...

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Abstract

The invention provides an FD-SOI substrate structure and device structure. The FD-SOI substrate structure comprises a silicon substrate, a buried oxide layer, a top germanium-silicon layer and a germanium oxynitride layer which are stacked in sequence. The substrate structure adopts a stack structure of the top germanium-silicon layer and the germanium oxynitride layer, the top germanium-silicon layer serves as a channel of the device, doping is not needed, the thickness is low, leakage current between a source electrode and a drain electrode can be greatly reduced, on the other hand, the top germanium-silicon layer can greatly improve the hole mobility, and then the performance of the device is improved. The germanium oxynitride layer covers the top germanium-silicon layer, so that water-soluble GeO2 or volatile GeO can be effectively prevented from being formed on the surface of the germanium-silicon channel, and the stability of the device is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor design and manufacture, in particular to an FD-SOI substrate structure and device structure. Background technique [0002] After the bulk silicon CMOS technology reaches 22nm, it is difficult to continue shrinking the feature size, and innovative technologies are urgently needed to maintain further development. Among the candidate technologies, FDSOI (Fully Depleted SOI, fully depleted SOI) technology is very competitive. For FDSOI transistors, the silicon film naturally defines the depth of the source-drain junction, and also defines the depletion region of the source-drain junction, which can improve short-channel effects such as DIBL (Drain Induced Barrier Lowering, drain-induced barrier reduction), and improve the device The sub-threshold characteristics reduce the static power consumption of the circuit. In addition, FDSOI transistors do not require channel doping, and can avoid effects such as...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L29/78H01L29/10
CPCH01L27/1203H01L29/7838H01L29/1079
Inventor 徐大朋薛忠营罗杰馨柴展
Owner 上海功成半导体科技有限公司
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