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Power module internal connection copper sheet, preparation method thereof, and power semiconductor module

A power semiconductor and internal connection technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc. Small secondary molding difficulty, improved molding yield, and reduced effect of mechanical fracturing

Pending Publication Date: 2021-11-16
WUXI LEAPERS SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this patent document still has the defects of low output, rising labor costs, poor yield, and lack of mass production.

Method used

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  • Power module internal connection copper sheet, preparation method thereof, and power semiconductor module
  • Power module internal connection copper sheet, preparation method thereof, and power semiconductor module
  • Power module internal connection copper sheet, preparation method thereof, and power semiconductor module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] Such as Figure 1~3 As shown, a power module internal connection copper sheet provided by the present invention includes a copper plate 1, a first copper strip 2 and a second copper strip 3, the first copper strip 2 and the second copper strip 3 are arranged on the copper plate 1 at intervals, Both the first copper strip 2 and the second copper strip 3 are arc-shaped; The copper plate 1 is hollow. The width of the first copper strip 2 is 2000um, and the thickness of the first copper strip 2 is 200um. The width of the second copper strip 3 is 2000um, and the thickness of the second copper strip 3 is 200um.

[0046] The present invention also provides a preparation method based on the above-mentioned internal connection copper sheet of the power module, comprising the following steps:

[0047] Step 1: connecting the arc-shaped first copper strip 2 and the arc-shaped second copper strip 3 to the copper plate 1 by bond bonding process;

[0048] Step 2: Insert correspond...

Embodiment 2

[0053] Such as Figure 4~6 As shown, the difference from Embodiment 1 is that a through hole 4 is provided on the copper plate 1 corresponding to the position below the first copper strip 2 and the second copper strip 3 .

[0054] The present invention also provides a preparation method based on the above-mentioned internal connection copper sheet of the power module, comprising the following steps:

[0055] Step 1: place the arc-shaped first copper strip 2 and the arc-shaped second copper strip 3 corresponding to the perforation 4 on the copper plate 1,

[0056] Step 2: Connect the first copper strip 2 and the second copper strip 3 to the copper plate 1 by bond bonding process;

[0057] Step 3: pass and fix the metal strip 5 that needs to support the first copper strip 2 and the second copper strip 3 through the perforation 4, and support the first copper strip 2 and the second copper strip 3;

[0058] Step 4: Position the copper plate 1 on the forming jig, and carry out pr...

Embodiment 3

[0062] Such as image 3 and Figure 7 As shown, the difference from Embodiment 1 is that the first copper strip 2 and the second copper strip 3 are integrally formed.

[0063] The present invention also provides a preparation method based on the above-mentioned internal connection copper sheet of the power module, comprising the following steps:

[0064] Step 1: Install a looper on the welding head;

[0065] Step 2: Bind the copper strip to the copper plate 1;

[0066] Step 3: Draw wire arcs on the copper tape and form it into the final platform shape at one time.

[0067] In this embodiment, in the process of welding the binding wire or ribbon to the copper plate, loop forming is added to the wire bonding equipment for one-time forming, and no secondary forming process is required.

[0068] In a preferred example, during the process of welding the binding wire or ribbon to the copper plate, a loop former is installed on the welding head of the wire welding equipment, and ...

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Abstract

The invention provides a power module internal connection copper sheet and a preparation method thereof. The power module internal connection copper sheet comprises a copper plate, a first copper strip and a second copper strip, the first copper strip and the second copper strip are arranged on the copper plate at an interval, the first copper strip and the second copper strip are arc-shaped, the two ends of the first copper strip are both connected to the copper plate, and the two ends of the second copper strip are both connected to the copper plate. The secondary forming difficulty of the copper plate in the module is reduced, and batch production capacity is achieved.

Description

technical field [0001] The invention relates to the technical field of power semiconductor module packaging, in particular to a power module internal connection copper sheet, a preparation method thereof, and a power semiconductor module. Background technique [0002] In the application of power supply and power electronic converter, power semiconductor (IGBT, MOSFET, SiC, GaN, etc.) devices are widely used. In the case of high power, the internal connection of the package of the module is generally used. Copper sheet technology is used. [0003] The strong conductivity of copper can reduce the on-resistance and parasitic inductance. At the same time, the contact area between the copper frame and the chip is large, and the thermal expansion coefficient is 16.9x10-6 / K, which is much lower than the traditional aluminum bonding wire, which can enhance the power. cycle life. However, the production and processing of the copper sheet used for welding requires a hollow design to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/492H01L21/48
CPCH01L23/4922H01L21/4871H01L2224/40137H01L2224/32225H01L23/3735H01L24/40H01L23/36H01L24/37
Inventor 洪旭梁小广丁烜明
Owner WUXI LEAPERS SEMICON CO LTD
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