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Electric floating silicon distortionless heterogeneous DEHFET device and preparation method thereof

A distortion-free and heterogeneous technology, applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., can solve problems such as failure to work normally, device failure, etc., to reduce thermal charges, reduce transient currents, and reduce electron collection Effect

Pending Publication Date: 2021-11-16
NORTHWEST UNIV(CN)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The high-energy single-particle bombardment of the DEHFET device generates a large number of electron-hole pairs near the depletion end of the drain electrode, causing the device to fail and cannot work normally

Method used

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  • Electric floating silicon distortionless heterogeneous DEHFET device and preparation method thereof
  • Electric floating silicon distortionless heterogeneous DEHFET device and preparation method thereof
  • Electric floating silicon distortionless heterogeneous DEHFET device and preparation method thereof

Examples

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Embodiment 1

[0051] See figure 1 ,Please refer to figure 1 and Figure 2a to Figure 2i , figure 1 It is a flow chart of a method for preparing an electrically floating silicon distortion-free heterogeneous DEHFET device provided by an embodiment of the present invention; Figure 2a to Figure 2iIt is a schematic diagram of the preparation process of an electrically floating silicon distortion-free heterogeneous DEHFET device provided by an embodiment of the present invention. The preparation method of this DEHFET device comprises:

[0052] Step 1, see Figure 2a , preparing an ion-implanted P-type substrate 1 .

[0053] Step 1.1. Select a P-type lightly doped silicon substrate 1 .

[0054] Wherein, the thickness range of the P-type lightly doped silicon substrate 1 is 305-405 um.

[0055] Step 1.2, implanting boron ions into the P-type lightly doped silicon substrate 1, and performing annealing treatment after the boron ion implantation is completed, so as to obtain the P-type substr...

Embodiment 2

[0095] This embodiment provides an electrically floating silicon distortion-free heterogeneous DEHFET device on the basis of the above embodiments. See image 3 , image 3 It is a schematic structural diagram of an electrically floating silicon distortion-free heterogeneous DEHFET device provided by an embodiment of the present invention. The electric floating silicon distortion-free heterogeneous DEHFET device includes a P-type substrate 1, a carbon-doped buffer zone 2, a carbon-doped electric floating region 3, a shielding region 4, a dielectric region 5, a gate electrode 6, a source electrode 7, a drain electrode electrode 8, silicon nitride film region 9 and well-grooved graphene 10.

[0096] P-type substrate 1, carbon-doped buffer zone 2, carbon-doped electric floating region 3, shielding region 4, dielectric region 5 and gate electrode 6 are arranged in sequence from bottom to top, and dielectric region 5 covers the shielding region 4 The middle part, so that part of ...

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Abstract

The invention discloses an electric floating silicon distortionless heterogeneous DEHFET device and a preparation method thereof. The method comprises the following steps: preparing a P-type substrate after ion implantation; forming a carbon-doped buffer region on the P-type substrate after ion implantation; forming a carbon-doped electric floating region on the carbon-doped buffer region; forming a shielding region on the carbon-doped electric floating region; forming a dielectric region in the middle of the upper surface of the shielding region so that the upper surfaces of two ends of the shielding region are not covered by the dielectric region; forming a gate electrode on the dielectric region; manufacturing a source electrode and a drain electrode at the two ends of the carbon-doped electric floating region and the shielding region through ion implantation; manufacturing silicon nitride film regions on the upper surface of the gate electrode and the side surfaces of the dielectric region and the gate electrode; forming a well groove in the bottom of the P-type substrate, and preparing well groove graphene in the well groove. The electric floating silicon distortionless heterogeneous DEHFET device prepared by the method can reduce the thermal charge of the drain electrode and effectively suppress the transient current of the drain electrode, thereby reducing the probability of causing the logic error of the device.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an electrically floating silicon distortion-free heterogeneous DEHFET device and a preparation method thereof. Background technique [0002] Space satellites, spacecraft, and electronic systems operating in electromagnetic damage environments can be damaged by charged particles, cosmic rays, and nuclear electromagnetic damage. As a new type of device in electronic systems, DEHFET (Distortionless Electric Clamping of Van der Waals Heterojunction FieldEffect Transistor) has the advantages of high performance, high reliability, simple process, and compatibility with traditional silicon processes. , which is expected to be applied to future high-performance three-dimensional integrated systems, opening up new technical approaches for further improving the performance of integrated circuits. [0003] With the rapid development of space technology, the subsequent re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/335H01L29/80H01L29/06H01L29/10
CPCH01L29/66068H01L29/802H01L29/0649H01L29/0607H01L29/0684H01L29/1075
Inventor 廖晨光雷晓艺戴扬张云尧张涵马晓龙赵武
Owner NORTHWEST UNIV(CN)
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