Power amplifier bias potential transient compensation circuit technology

Abstract

The invention discloses a power amplifier bias potential transient compensation circuit technology, which comprises a narrow pulse generator, the output end of the narrow pulse generator is provided with a first switch transistor, the output end of the first switch transistor is provided with a buffer, the output end of the buffer is provided with a second switch transistor. The output end of the second switch transistor is provided with a driver, the output end of the first switch transistor is provided with a first capacitor, a second capacitor and a third capacitor, and the first capacitor is electrically connected with the first switch transistor. The circuit structure generates a triangular wave uprush compensation signal which linearly changes along with time, compared with a general exponential decay type compensation signal in the industry, the compensation effect on EVM performance in the period of delta t is better, the compensation signal duration parameter is more insensitive to fluctuation of factors such as process, temperature and voltage. The mass production stability of the EVM performance in the delta t period is better.

Description

technical field [0001] The invention relates to the technical field of power amplifiers, more specifically, the invention relates to a power amplifier bias potential transient compensation circuit technology. Background technique [0002] In the communication system of time division duplex (TDD) mode, the bias potential of the input amplifier tube of the used power amplifier needs to follow the TDD switching signal to switch quickly between the establishment / off state to save the entire Transmission link power consumption, when the input bias potential of the power amplifier is quickly established from 0V to the potential value under the stable working state, the working point and output performance of the power amplifier cannot reach the stable working value immediately, but need to experience a certain delay. It takes ⊿t (generally on the order of 100us) to reach a steady state, so the dynamic EVM performance of the launch system is poor during the ⊿t period; [0003] In ...

AI Technical Summary

Problems solved by technology

[0005] 1. The RC discharge time determines the duration of overshoot compensation. It fluctuates greatly with factors such as process, temperature, and voltage. Therefore, the fluctuation of the compensation signal duration index has a large dispersion. In actual mass production, a certain number of chips are switched in TDD The dynamic EVM performance of the moment is not compensated to be within the target range;

[0006] 2. The RC discharge curve has an exponential characteristic. Compared with the linear discharge characteristic, the dynamic EVM performance compensation effect at the TDD switching time is relatively poor

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