Epitaxial wafer of deep ultraviolet light emitting diode and preparation method thereof

Abstract

The invention provides an epitaxial wafer of a deep ultraviolet light emitting diode and a preparation method of the epitaxial wafer. The epitaxial wafer comprises a substrate, and an AlN reflecting layer, an AlN stress release layer, an AlN template layer, an n-type AlGaN layer, a multi-quantum well layer and a p-type layer which are sequentially formed on the substrate; the AlN reflecting layer is of a periodic structure, the AlN reflecting layer comprises AlN film layers and AlON film layers which are alternately stacked, and the refractive index of the AlN film layers is different from that of the AlON film layers; the AlN stress release layer is of a periodic structure and comprises a plurality of first AlN layers and a plurality of second AlN layers which are alternately stacked, the first AlN layers grow in a physical vapor deposition mode, and the second AlN layers grow in a metal organic compound chemical vapor deposition mode; and the growth temperature of the second AlN layer in the first plurality of periods is lower than the growth temperature of the second AlN layer in the remaining periods. According to the invention, the dislocation defect of the epitaxial wafer can be reduced, the crystal quality of the epitaxial wafer can be improved, the reflection effect of the AlN film layer can be improved, and the luminous efficiency of the epitaxial wafer can be improved.

Description

technical field [0001] The disclosure relates to the technical field of optoelectronic manufacturing, in particular to an epitaxial wafer of a deep ultraviolet light-emitting diode and a preparation method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED), as a very influential new product in the optoelectronics industry, has the characteristics of small size, long service life, colorful colors, and low energy consumption. It is widely used in lighting, display screens , signal lights, backlight, toys and other fields. The core structure of the LED is the epitaxial wafer, and the production of the epitaxial wafer has a great influence on the photoelectric characteristics of the LED. [0003] The epitaxial wafer usually includes an n-type layer, a multi-quantum well layer and a p-type layer, and the n-type layer in the epitaxial wafer of a deep ultraviolet light-emitting diode is usually an AlGaN layer. [0004]...

AI Technical Summary

Problems solved by technology

[0004] In order to improve the quality of the AlGaN layer and reduce the dislocation density, it is usually necessary to grow an AlN film layer on the substrate before growing the AlGaN layer. However, even if the AlN buffer layer is set, the grown epitaxial wafer still has many dislocation defects. ; At the same time, the reflective effect of the AlN film layer is also poor

Therefore, the deep ultraviolet light-emitting diodes in the related art have the problem that the luminous efficiency cannot meet the requirements

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