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Method for preparing metal nanowire array on the basis of interface reaction and solid-state phase change

A metal nanowire, solid-state phase transition technology, applied in the field of preparation of metal nanowire arrays, can solve the problems of low efficiency, high cost, complex preparation process of metal nanowire arrays, etc., and achieves easy collection, less aggregation, and universality. sexual effect

Pending Publication Date: 2021-10-22
HARBIN UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention provides a method for preparing a metal nanowire array based on interface reaction and solid-state phase transition in order to solve the problems of complex preparation process, low efficiency and high cost of the existing metal nanowire array

Method used

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  • Method for preparing metal nanowire array on the basis of interface reaction and solid-state phase change
  • Method for preparing metal nanowire array on the basis of interface reaction and solid-state phase change
  • Method for preparing metal nanowire array on the basis of interface reaction and solid-state phase change

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preparation example Construction

[0055] In specific implementation process, Al of the present invention 12 Mg 17 The preparation method of the nanowire array, firstly, the aluminum alloy substrate is cleaned; secondly, the MgZn-based alloy is used as the cladding material to make close contact with the substrate; thirdly, the metal nanowire array is grown on the aluminum alloy substrate by the method of reaction diffusion Inside; finally, remove the bulge on the surface of the substrate. The method specifically includes the following steps:

[0056] 1. Clean the surface of the substrate;

[0057] 2. Using MgZn-based alloy as the cladding material, the MgZn-based alloy is in close contact with the substrate as a diffusion couple to establish a reaction-diffusion system;

[0058] 3. Using the method of constant temperature heating, the growth of the intermetallic compound and the solid-state phase transition process are carried out in the reaction diffusion system established in step 2, and the growth direct...

Embodiment 1

[0062] In this example, the preparation of Al 12 Mg 17 Nanowire array: use ethanol to clean the aluminum substrate in an ultrasonic cleaning machine, and the cleaning time is 5 minutes. The MgZn alloy is melted as the cladding material, and it is closely contacted with the metal Al plate by hot cladding. After the contact, the MgZn cladding layer and the metal Al plate are integrated as a diffusion couple, and the covering agent is used as a protective measure for solid-state During the phase transition process, the temperature is 450°C and the time is 5 minutes. Take out the diffusion couple after the reaction is completed, and use sandpaper grinding method for mechanical processing. After removing the bulge on the surface of the metal Al plate, the directional growth of Al can be obtained. 12 Mg 17 The technical parameters and performance indexes of the nanowire array are as follows: the wire diameter is 150-200nm, the spacing is 200-300nm, and the length is 4-6μm.

[00...

Embodiment 2

[0067] In this example, the preparation of Al 12 Mg 17 Nanowire array: use ethanol to clean the aluminum substrate in an ultrasonic cleaning machine, and the cleaning time is 5 minutes. A highly eutectic MgZn alloy is smelted as cladding material, and it is closely contacted with the metal Al plate by hot cladding. After contact, the MgZn cladding layer and the metal Al plate are integrated as a diffusion couple to cover As a protective measure, the solid-state phase transition process is carried out at a temperature of 460°C and a time of 5 minutes. Take out the diffusion couple after the reaction is completed, and use sandpaper grinding method for mechanical processing. After removing the bulge on the surface of the metal Al plate, the directional growth of Al can be obtained. 12 Mg 17 The technical parameters and performance indexes of the nanowire array are as follows: the wire diameter is 150-200nm, the spacing is 200-300nm, and the length is 4-6μm.

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Abstract

The invention belongs to the technical field of preparation of one-dimensional nano materials, and particularly relates to a method for preparing a metal nanowire array on the basis of interface reaction and solid-state phase change. The method for preparing the metal nanowire array on the basis of interface reaction and solid-state phase change comprises the following steps of: firstly, cleaning a substrate; secondly, enabling a low-melting-point alloy as a cladding material to be in close contact with the substrate; thirdly, enabling the metal nanowire array to grow in the substrate through a reaction diffusion method; and fourthly, removing bumps on the surface of the substrate to obtain the metal nanowire array embedded in the substrate. The method for preparing the metal nanowire array on the basis of interface reaction and solid-state phase change has the advantages that (1) the cost is low, the reaction time is short, and the operation is simple and effective; (2) the metal nanowire prepared by the method possesses high orientation, orderliness and uniform length; and (3) the method possesses universality, the preferred orientation of substrate crystal grains can be selectively changed, the growth direction and the growth area of the nanowires can be controlled, and the metal nanowire array is expected to be attached in the substrate in a large range.

Description

technical field [0001] The invention belongs to the technical field of preparation of one-dimensional nanometer materials, in particular to a method for preparing a metal nanowire array based on interface reaction and solid-state phase transition. Background technique [0002] Nanomaterials are now a hot research direction in the field of materials. One-dimensional nanomaterials such as nanowires and nanorods can play an important role in the fields of sensors, catalysis, and energy. Among them, metal nanowires have unique electrical, magnetic and transport properties, and have broad application prospects in optoelectronic devices and other fields. Common methods for preparing metal nanowires mainly include chemical vapor deposition, template method, and solvothermal method. Chemical vapor deposition is a process of controlling the nucleation and growth of nanomaterials by controlling parameters such as pressure, gas flow rate, and substrate temperature by using gas-phase c...

Claims

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Application Information

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IPC IPC(8): B22F1/00B22F9/04C22C23/02C23C26/02B82Y30/00B82Y40/00
CPCC23C26/02B22F9/04C22C23/02B82Y30/00B82Y40/00
Inventor 王敬泽翁冠军常晶苏云龙尹佳庆
Owner HARBIN UNIV OF SCI & TECH
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