Preparation method of high-transmittance silicon rotary sputtering target material

Abstract

The invention provides a preparation method of a high-transmittance silicon rotary sputtering target material. The method comprises the following steps that a 6N polycrystalline silicon heavily doped raw material and a 5N polycrystalline silicon high-resistance raw material are crushed into powder to obtain a 6N polycrystalline silicon semi-finished product raw material and a 5N polycrystalline silicon semi-finished product raw material, and the 6N polycrystalline silicon semi-finished product raw material and the 5N polycrystalline silicon semi-finished product raw material are mixed and diluted to prepare high-purity silicon powder with a low impurity content. In this way, a content of impurities, especially B, of the target material prepared through spraying is reduced, a transmittance of the target material in a coating process is improved, an LAB value is greater than or equal to 93%, the use cost of customers is reduced, and coating requirements of the customers on large-size products are met.

Description

technical field [0001] The invention relates to the field of silicon targets, in particular to a method for preparing a high transmittance silicon rotary sputtering target. Background technique [0002] Physical vapor deposition (Physical Vapor Deposition, PVD) refers to the use of low-voltage, high-current arc discharge technology under vacuum conditions to use gas discharge to evaporate the material source and ionize both the evaporated substance and the gas, and then pass The acceleration of the electric field causes the evaporated substance and its reaction product to deposit on the workpiece to form a thin film with a special function. PVD technology is the core technology of various industries such as semiconductor chip manufacturing, solar energy industry, and LCD manufacturing industry. The main methods are vacuum evaporation, arc plasma plating, ion coating, molecular beam epitaxy and sputtering coating, etc. [0003] Sputtering is one of the main technologies for ...

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Problems solved by technology

However, the existing formula is silicon with a purity of ≥99.9%, and the rest is impurities, and the production process is relatively simple. The products obtained by this formula and process can meet certain requirements for use, but there are also obvious defects: its resistivity is relatively high , the transmittance is low, which leads to a high incidence of abnormalities in the use of this target by customers, which will seriously affect the rapid development of the electronics industry

[0007] At present, the preparation methods of silicon targets are divided into vacuum melting + binding, atmospheric plasma spraying and other methods, but due to the limitation of the preparation process, the following problems exist in the preparation of the target: 1. High temperature equipment is used, and the preparation cost is high ;2. High oxygen content, high resistivity, and low purity. The use transmittance is not up to standard and cannot meet (LAB value) ≥ 93%