Transistor logic circuit with stable performance under continuous radiation exposure

Abstract

The invention discloses a transistor logic circuit with stable performance under continuous radiation exposure. The transistor logic circuit comprises an input multi-emitter transistor, a phase separation transistor, an emitter follower, an output load transistor, an absorbable transistor, a resistor group and an additional diode element group, wherein the additional diode element group is connected with the input multi-emitter transistor, the phase separation transistor, the emitter follower, the absorbable transistor and the resistor group; the additional diode element group comprises a plurality of additional diode elements and is used for controlling the logic level value of the output end and keeping the response speed under continuous radiation exposure. The invention discloses a transistor element logic operation method with stable performance under continuous radiation exposure, and the low-level output voltage of a novel circuit has a value low enough, so that the gain and the switching speed can be kept stable.

Description

technical field [0001] The invention relates to the field of semiconductors, and more specifically, the invention relates to a transistor logic circuit with stable performance under continuous radiation irradiation. Background technique [0002] The increasingly extensive research on aerospace and space technology and high-energy physics requires semiconductor devices and circuits that can work stably under continuous radiation conditions. At present, there are few high-quality and high-reliability semiconductor devices that are resistant to radiation, and the used Device design, process design and other methods all have shortcomings such as complex process and high price; the closest scheme to the present invention is to obtain semiconductor devices and circuits that can work stably under continuous radiation conditions by circuit design, but known circuit design and The characteristics of the components are very sensitive to the change of the gain of the absorbing transist...

AI Technical Summary

Problems solved by technology

[0002] The increasingly extensive research on aerospace and space technology and high-energy physics requires semiconductor devices and circuits that can work stably under continuous radiation conditions. At present, there are few high-quality and high-reliability semiconductor devices that are resistant to radiation, and the used Device design, process design and other methods all have shortcomings such as complex process and high price; the closest scheme to the present invention is to obtain semiconductor devices and circuits that can work stably under continuous radiation conditions by circuit design, but known circuit design and The characteristics of the components are very sensitive to the change of the gain of the absorbing transistor and the deviation of the calculated value of the resistance in the basic circuit of the absorbing transistor, so that the semiconductor circuit and the system constructed thereof cannot work stably under continuous radiation conditions; the main disadvantages of the prior art are as follows: Device design: the circuit is complex and sensitive to the change of the absorbable transistor gain and the deviation of the resistance calculation value in the basic circuit of the absorbing transistor, which makes the semiconductor circuit and its constructed system unable to work stably under continuous radiation conditions; process design: increase the process steps and Satisfactory results cannot be obtained by changing the process flow, and the price is high; therefore, it is necessary to propose a transistor logic circuit with stable performance under continuous radiation irradiation to at least partially solve the problems existing in the prior art

Images