Power transistor

Abstract

The invention relates to a power transistor, and the transistor at least comprises a substrate, a buffer layer and a barrier layer; a gate electrode, a source electrode and a drain electrode which are located above the barrier layer; wherein one or more insulated isolation structures are arranged in a conducting channel below the gate electrode and between the source electrode and the drain electrode. The invention also relates to electronic equipment comprising the power transistor.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to a power transistor with an isolation structure. Background technique [0002] Power transistors such as high electron mobility transistors (HEMTs) are widely used in high frequency and high power fields such as wireless communication base stations, radar and automotive electronics. As an emerging semiconductor material, gallium nitride has the characteristics of wide band gap and high electron mobility, and is especially suitable for application in the field of power semiconductor devices such as HEMT. GaN FETs exhibit far lower on-resistance and capacitance than their silicon counterparts. Gallium nitride field effect transistors have been verified to greatly reduce the volume of power conversion systems, increase operating frequency, and improve efficiency. [0003] However, in actual use, the on-resistance of the power transistor is unavoidable. Even though...

AI Technical Summary

Problems solved by technology

[0005] However, power transistors usually have a large area, and the temperature of each position is uneven. When the temperature is too high and burns the transistor, it is often not that the entire transistor is burned at all positions at the same time, but that some points form hot spots first and burn out.

Such a situation results in limited utilization potential of power transistors such as HEMTs

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