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Ultra-wideband fluorescent quantum dot doped quartz amplification optical fiber and preparation method thereof

A fluorescent quantum dot and ultra-broadband technology, which is applied in the field of optical fiber doped with quantum dots and its preparation, can solve the problems of insufficient bandwidth and non-tunable emission

Pending Publication Date: 2021-09-17
SHANGHAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a quantum dot-doped ultra-broadband fluorescent optical fiber and its preparation method in view of the insufficient bandwidth of the current rare earth-doped amplifying optical fiber and the problem of non-adjustable emission characteristics.

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  • Ultra-wideband fluorescent quantum dot doped quartz amplification optical fiber and preparation method thereof
  • Ultra-wideband fluorescent quantum dot doped quartz amplification optical fiber and preparation method thereof
  • Ultra-wideband fluorescent quantum dot doped quartz amplification optical fiber and preparation method thereof

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preparation example Construction

[0037] A method for preparing an ultra-broadband fluorescent quantum dot-doped quartz amplifying optical fiber, which is used to manufacture the above-mentioned ultra-broadband fluorescent quantum dot-doped quartz amplifying optical fiber, the steps are as follows:

[0038] 1) First, use the modified chemical vapor deposition method (MCVD) to deposit the cladding and silicon dioxide loose layer at high temperature to a translucent glass state;

[0039]2) Then, one or two or three kinds of quantum dots among PbS, PbSe, and PbTe are uniformly circulated and alternately deposited in the quartz substrate by atomic layer deposition (ALD);

[0040] 3) Repeat the process of 2) to control the doping concentration of different quantum dot materials and the size of the quantum dots through the deposition cycle;

[0041] 4) Place the deposited quartz substrate tube in a vacuum or nitrogen atmosphere for in-situ annealing. The annealing temperature is 100-500°C and the annealing time is 1...

Embodiment 1

[0051] see figure 1 with figure 2 , an ultra-broadband fluorescent quantum dot-doped silica amplifying fiber, comprising a core 1 and a cladding 2, the core 1 comprising an outer silicon dioxide loose layer 1-1 and uniformly distributed semiconductor quantum dots of different sizes in the middle Dot material layer 1-2; the core 1 is located in the middle of the cladding 2. The silicon dioxide loose layer 1-1 is high-purity silicon dioxide or doped with a small concentration of high refractive index GeO 2 silica material. The semiconductor quantum dot material layer utilizes ALD technology and in-situ annealing technology to deposit PbS quantum dots of different sizes, and aluminum oxide Al 2 o 3 GeO with improved refractive index distribution 2 Material. By controlling the cycle period to be 50-500 cycles, the annealing temperature to be 200-300° C., and the annealing time to be 30 minutes, the size of the semiconductor PbS quantum dot is adjusted to be controlled betwe...

Embodiment 2

[0053] This embodiment is basically the same as the first embodiment, except that the process parameters are different, and the structural parameters of the optical fiber are adjusted.

[0054] see figure 1 with figure 2 , an ultra-broadband fluorescent quantum dot-doped silica amplifying fiber, comprising a core 1 and a cladding 2, the core 1 comprising an outer silicon dioxide loose layer 1-1 and uniformly distributed semiconductor quantum dots of different sizes in the middle Dot material layer 1-2; the core 1 is located in the middle of the cladding 2. The silicon dioxide loose layer 1-1 is high-purity silicon dioxide or doped with a small concentration of high refractive index GeO 2 silica material. The semiconductor quantum dot material layer utilizes ALD technology and in-situ annealing technology to deposit PbSe quantum dots of different sizes, and aluminum oxide Al 2 o 3 GeO with improved refractive index distribution 2 Material. By controlling the cycle perio...

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Abstract

The invention discloses an ultra-wideband fluorescent quantum dot doped quartz amplification optical fiber and a preparation method thereof, wherein a fiber core comprises an outer silicon dioxide loose layer and a middle doped layer, the silicon dioxide loose layer is made of high-purity silicon dioxide or a silicon dioxide material doped with certain concentration of high-refractive index GeO2, one or more quantum dots of PbS, PbSe and PbTe are doped in the doped layer, and Al2O3 and GeO2 are further doped in the doped layer. According to the invention, by utilizing the advantages of combination of an atomic layer deposition (ALD) technology and an in-situ annealing technology, semiconductor quantum dot materials of different sizes are combined with optical fiber preparation, so that the size of the quantum dots can be accurately regulated and controlled, and the deposited quantum dot materials are better in uniformity, high in density, controllable in concentration, good in dispersity and few in material defect; and the ultra-wideband fluorescent quantum dot doped quartz amplification optical fiber has the characteristics of wide fluorescence coverage, wide gain spectrum width, low overall loss, low noise coefficient and the like.

Description

technical field [0001] The invention relates to an optical fiber doped with quantum dots and a preparation method thereof. Background technique [0002] Due to the development of ultra-high-speed, large-capacity, and long-distance optical fiber communication systems, new requirements have been put forward for the power, bandwidth, and gain flatness of optical fiber amplifiers. The doping source with good gain flatness is doped into the optical fiber, and it is urgent to prepare a new type of doped optical fiber. At present, researchers have observed the phenomenon of light radiation in quantum dot materials. According to the characteristics of the quantum dot material, when the size of each dimension is reduced to the nanometer level, after the quantum dot is activated, photons of different wavelengths can be emitted by adjusting the particle size of the quantum dot. This feature has attracted the interest of many researchers and invested in research, and successfully appl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03B37/018C03B37/027C03C13/04
CPCC03B37/018C03B37/01807C03B37/027C03C13/04
Inventor 王廷云潘香萍董艳华文建湘张海莹黄怿张小贝
Owner SHANGHAI UNIV
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