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Scattering medium capable of being formed through light curing, photoelectric device and preparation method thereof

A technology for optoelectronic devices and photocurable materials, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of increasing the manufacturing complexity of optoelectronic devices, affecting quasi-accuracy, and reducing the reliability of optoelectronic devices, and achieving good optoelectronic response characteristics, The effect of easy regulation and reduction of design and manufacturing process difficulty

Pending Publication Date: 2021-09-07
JINAN UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the scattering medium is generally prepared by spin-coating the aqueous dispersion of zinc oxide and titanium dioxide particles on the surface of the object and drying it. However, this method can only form a thin film scattering medium. If you want to further pattern the photoelectric device, you need to use Post-processing by etching and other processing methods increases the complexity of optoelectronic devices, affects alignment accuracy, and further reduces the reliability of optoelectronic devices

Method used

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  • Scattering medium capable of being formed through light curing, photoelectric device and preparation method thereof
  • Scattering medium capable of being formed through light curing, photoelectric device and preparation method thereof
  • Scattering medium capable of being formed through light curing, photoelectric device and preparation method thereof

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Embodiment 1

[0036] This embodiment provides a scattering medium, including: nanocrystalline particles, a treatment agent, and a photocurable material; the treatment agent modifies the coating of the nanocrystalline particles, and the modified nanocrystalline particles are dispersed in the photocurable material.

[0037] The nanocrystalline particles are titanium dioxide nanocrystals with a particle size of 5nm, and the mass fraction of nanocrystalline particles in the scattering medium is 30%; the treatment agent is silane coupling agent KH-570, The coating thickness of the nanocrystal is 0.5nm; the photocurable material contains pentaerythritol tetraacrylate (PETTA) and isopropyl thioxanthone (ITX), and the proportion of PETTA and ITX is 97:3.

[0038] The preparation method of above-mentioned scattering medium, comprises the following steps:

[0039] (1) Mixing the treatment agent with the nanocrystalline particles for surface modification to obtain surface modified nanocrystalline part...

Embodiment 2

[0042] This embodiment provides a scattering medium, including: nanocrystalline particles, a treatment agent, and a photocurable material; the treatment agent modifies the coating of the nanocrystalline particles, and the modified nanocrystalline particles are dispersed in the photocurable material.

[0043] The nanocrystalline particles are titanium dioxide nanocrystals with a particle size of 5nm, and the mass fraction of the nanocrystalline particles in the scattering medium is 0%, 10%, 20% or 30%; the treatment agent is a silane coupling agent KH-570, Silane coupling agent KH-570 is 0.3nm to the coating thickness of titanium dioxide nanocrystal; Contain pentaerythritol tetraacrylate (PETTA) and Irgacure-369 (photoinitiator, purchased from BASF company) in the photocurable material, PETTA and Irgacure -369 has a specific gravity of 98:2.

[0044] The preparation method of above-mentioned scattering medium, comprises the following steps:

[0045] (1) Mixing the treatment ag...

Embodiment 3

[0048] This embodiment provides a planar optoelectronic device, the preparation method of which includes the following steps:

[0049] (1) Prepare a substrate including a control circuit on a silicon wafer using a standard CMOS process as a supporting platform for optoelectronic devices;

[0050] (2) Coating the scattering medium prepared in Example 1 on the surface of the substrate, so that it is combined with the substrate;

[0051] (3) Using an ultraviolet light source with a wavelength of 390nm, at a rate of 1000mJ / cm 2 The optical power is used to light-cure the scattering medium for one-time molding, and to make interconnected electrodes through micro-nano processing methods to obtain planar optoelectronic devices.

[0052] figure 1 Shown is a schematic structural view of the fabricated optoelectronic device, in which a substrate 00 , an organic polymer material 11 , a treatment agent 22 , and nanocrystalline particles 33 are shown.

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Abstract

The invention belongs to the technical field of photoelectric devices, and discloses a scattering medium capable of being formed through light curing, a photoelectric device and a preparation method thereof. The scattering medium comprises nanocrystalline particles, a treating agent and a photocuring material, wherein the treating agent is selected from a surfactant and / or a coupling agent. The scattering medium can directly form a planar or three-dimensional photoelectric device through photocuring, so that the difficulty of the design and manufacturing process of the photoelectric device is greatly reduced.

Description

technical field [0001] The invention belongs to the technical field of photoelectric devices, and in particular relates to a light-curable and formable scattering medium, a photoelectric device and a preparation method thereof. Background technique [0002] The speckle phenomenon occurs when transmitting light through a scatterer or a space with suspended particles, which originates from scattering by the scattering medium. Scattering is a phenomenon in which the spatial distribution, polarization state or frequency of light intensity is changed by the action of molecules or atoms in the propagation medium when light is propagating. Its principle is widely used in the fields of optical imaging and optical communication, such as adaptive Optical imaging technology, optical coherence tomography imaging technology, "ghost" imaging technology, time-reversal imaging technology, wavelength division multiplexing and demodulation technology, etc. [0003] At present, the scattering...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08F122/14C08F2/48C08K9/06C08K3/22H01L31/18
CPCC08F122/1006C08F2/48C08K9/06C08K3/22H01L31/18C08K2201/011C08K2003/2241
Inventor 宋世超曹耀宇
Owner JINAN UNIVERSITY
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