Semiconductor device and manufacturing method thereof

Abstract

The embodiment of the invention provides a semiconductor device and a manufacturing method thereof. A sacrificial layer can be deposited on a substrate, the sacrificial layer is etched by using a Bosch process to form a capacitance hole, the side wall of the capacitance hole is in concave-convex alternate change in the longitudinal direction, and a bottom electrode layer, a dielectric layer and a top electrode layer are sequentially formed in the capacitance hole. Due to the fact that the Bosch technology can enable etching to be carried out in the depth direction, formation of the capacitor hole with the high depth-to-width ratio is facilitated, uniformity of the hole diameter of the capacitor hole is improved, the side wall can be protected in the etching process, the concave-convex alternate change characteristic on the side wall is naturally formed in the etching process, doping in the deposition technology is not needed, the deposition technology is simplified, the capacitor area is increased, and a high-performance memory device is obtained on the premise of simplifying the process.

Description

technical field [0001] The present application relates to the field of semiconductor devices and manufacturing thereof, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] A capacitor (Capacitor) is a component that can store electricity and energy. By applying different voltages to the two electrodes of the capacitor, different amounts of charges can be stored in the capacitor. On this basis, capacitors can be used to achieve different data storage. It can be seen that the quality of the capacitor directly affects the data storage performance of the semiconductor device. [0003] Currently, capacitor holes can be obtained by etching the sacrificial layer, and a composite layer of a bottom electrode, a dielectric layer, and a top electrode is formed in the capacitor hole, thereby forming a capacitor. However, as the integration density of DRAM (Dynamic Random Access Memory) semiconductor devices increases, the aspect ra...

AI Technical Summary

Problems solved by technology

Capacitors manufactured by existing semiconductor device processes have a small bottom surface area of ​​the bottom electrode, resulting in a small storage capacity of the capacitor and poor data storage performance of the semiconductor device.

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