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Ultrathin high-strength alloy tungsten wire diamond fretsaw and preparation method thereof

A technology of diamond wire saw and diamond particles, which is applied in the direction of metal sawing equipment, metal processing equipment, sawing machine tool manufacturing, etc., can solve the problem that the surface cleanliness of tungsten wire cannot be guaranteed, cannot match the production speed of diamond wire, and the oxidation It is difficult to remove residues and other problems, and achieve the effect of high torsion value, low resistivity and enhanced binding force

Active Publication Date: 2021-08-20
江苏聚成金刚石科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the conventional method of removing thick oxide layer and graphite milk cannot match the production speed of diamond wire. At the same time, the removal rate is low, and the surface cleanliness of tungsten wire cannot be guaranteed. For example, it is difficult to remove graphite milk and oxide residues in the drawing groove. , these technical problems have increased the complexity of applying tungsten wire to the wire saw preparation process

Method used

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  • Ultrathin high-strength alloy tungsten wire diamond fretsaw and preparation method thereof
  • Ultrathin high-strength alloy tungsten wire diamond fretsaw and preparation method thereof
  • Ultrathin high-strength alloy tungsten wire diamond fretsaw and preparation method thereof

Examples

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Embodiment 1

[0048] In this embodiment, use a black tungsten wire with a diameter of 45um as the busbar to prepare an ultra-fine high-strength alloy tungsten wire diamond wire saw with a specification of H-40, such as Figure 1-3 Shown, preparation process of the present invention comprises the following steps:

[0049] Step 1. The black tungsten wire goes through unwinding → three-stage electrolytic polishing → washing → drying → winding to prepare white tungsten wire;

[0050] Step 2. The scheelite wire obtained after the step 1 treatment is subjected to setting-off→secondary degreasing→water washing→pickling→water washing→impact nickel→sanding→sand fixing→water washing→heat treatment→winding to obtain target product.

[0051] The three-stage electrolytic polishing process in step one includes:

[0052] (1) The first-level electrolytic polishing process parameters include: 170g / L NaOH, 40g / L K 2 CO 3 , the electrolytic polishing temperature is 20°C, the flow rate of the polishing flu...

Embodiment 2

[0064] Use black tungsten wire with a diameter of 42um in this embodiment as the superfine high-strength alloy tungsten wire diamond wire saw of H-38 as the busbar preparation specification, such as Figure 1-3 Shown, preparation process of the present invention comprises the following steps:

[0065] Step 1. The black tungsten wire goes through unwinding → three-stage electrolytic polishing → washing → drying → winding to prepare white tungsten wire;

[0066] Step 2. The white tungsten wire treated in the step (1) is subjected to setting-off→secondary degreasing→water washing→pickling→water washing→impact nickel→sanding→sand fixing→water washing→heat treatment→winding to obtain target product.

[0067] The three-stage electrolytic polishing process in step one includes:

[0068] (1) The first-level electrolytic polishing process parameters include: 170g / L NaOH, 40g / L K 2 CO 3 , the electrolytic polishing temperature is 20°C, the flow rate of the polishing fluid is 200L / mi...

Embodiment 3

[0080] In this embodiment, an alloy tungsten wire with a diameter of 39um is used as a busbar to prepare an ultra-fine high-strength alloy tungsten wire diamond wire saw with a specification of H-35, such as Figure 1-3 Shown, preparation process of the present invention comprises the following steps:

[0081] Step 1. The black tungsten wire goes through unwinding → three-stage electrolytic polishing → washing → drying → winding to prepare white tungsten wire;

[0082] Step 2. The white tungsten wire treated in the step (1) is subjected to setting-off→secondary degreasing→water washing→pickling→water washing→impact nickel→sanding→sand fixing→water washing→heat treatment→winding to obtain target product.

[0083] The three-stage electrolytic polishing process in step 1 includes:

[0084] (1) The first-level electrolytic polishing process parameters include: 170g / L NaOH, 40g / L K 2 CO 3 , the electrolytic polishing temperature is 20°C, the flow rate of the polishing fluid is ...

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Abstract

The invention discloses a preparation technology of an ultrathin high-strength alloy tungsten wire diamond fretsaw, belongs to the field of solar photovoltaic slicing fretsaws, and mainly relates to a preparation method of a single crystal and polycrystal bar cutting fretsaw. The preparation method comprises the following steps: (1) preferably selecting a black tungsten wire, and preparing a silver white metal luster tungsten wire through pay-off, trinary electrolytic polishing, washing, drying and take-up; and (2) sequentially enabling the tungsten wire treated in the step (1) to be subjected to pay-off, secondary oil removal, acid pickling, nickel impacting, sand feeding, sand consolidation, heat treatment and take-up, and preparing the alloy tungsten wire diamond fretsaw with the specification of 30-40 microns through the steps. The high-strength ultrathin tungsten alloy diamond fretsaw is prepared by optimizing, combining and controlling the process parameters of the step (1) and the step (2), when a large-size single crystal silicon rod is cut, the silicon material loss can be reduced by about 13%, the earnings of 288-300 yuan and 0.11-0.15 yuan of the newly added value of each piece can be produced by each cutter, and the high-strength ultrathin tungsten alloy diamond fretsaw has great economic and popularization values.

Description

technical field [0001] The invention belongs to the field of photovoltaic slice wire saws, in particular to an ultrafine high-strength alloy tungsten wire diamond wire saw and a preparation method thereof. Background technique [0002] Since photovoltaic chip manufacturers have more aggressive requirements on the comprehensive yield rate of the chip, the broken wire rate in the process, and the single-pole wire consumption, in addition to the above indicators, customers require to increase the single-pole chip output rate to reduce production costs. At the same time, with the advancement of photovoltaic power generation technology, the size of silicon wafers has gradually changed from 158um to 210um, or even larger. At present, the field of diamond wire saw basically uses 92C or 100C wire as the carrier to prepare diamond wire saws of different specifications. Usually, the carbon steel bus bar has to go through large drawing→medium drawing→heat treatment→ISC→multi-pass drawi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23D61/18B23D65/00C25D7/06C25D5/38C25F3/26C25F3/08C25F7/00C25F1/08C25D3/12C25D15/00
CPCB23D61/185B23D65/00C25D7/0607C25D5/38C25F3/26C25F3/08C25F7/00C25F1/08C25D3/12C25D15/00
Inventor 韩登峰李信张福军
Owner 江苏聚成金刚石科技股份有限公司
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