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Ni3Fe-coated C nanocapsule-loaded multi-layer graphite lamellar structure with N doping defects

A technology of nanocapsules and graphite flakes, which is applied in the field of materials, can solve problems such as not involving wave absorption, and achieve the effects of low production cost, simple equipment and high production efficiency

Active Publication Date: 2021-08-10
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But it does not involve the application of microwave absorption

Method used

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  • Ni3Fe-coated C nanocapsule-loaded multi-layer graphite lamellar structure with N doping defects
  • Ni3Fe-coated C nanocapsule-loaded multi-layer graphite lamellar structure with N doping defects
  • Ni3Fe-coated C nanocapsule-loaded multi-layer graphite lamellar structure with N doping defects

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Preparation of loaded Ni by high temperature plasma arc evaporation technique 3 Fe@C nanocapsules and multilayer graphite sheet structure with N-doped defects:

[0051]In the plasma arc discharge evaporation process, the consumed anode target is a rod structure (φ6mm) pressed by 0.68at.% Fe powder, 2.72at.% Ni powder and 96.6at.% graphite powder, and the cathode The end of the graphite rod close to the anode is tapered, the taper angle is 30 degrees, and the distance between the graphite cathode and the anode target is 1.5mm. Vacuum chamber up to 5×10 -3 After Pa, 20ml of acetonitrile was introduced into the vacuum cavity. Turn on the DC power supply, adjust the voltage to 20-50V, plasma arc discharge occurs between the anode target and the cathode, and the arc discharge current is 100A. During the arc discharge process, adjust the working current and voltage to keep relatively stable, and the arc maintenance time is 80 minutes , prepared in the above atmosphere to s...

Embodiment 2

[0061] Preparation of loaded Ni by high temperature plasma arc evaporation technique 3 Fe@C nanocapsules and multilayer graphite sheet structure with N-doped defects:

[0062] In the plasma arc discharge evaporation process, the consumed anode target is a rod structure (φ8mm) pressed by 1.02at.% Fe powder, 2.38at.% Ni powder and 96.6at.% graphite powder, and the cathode The end of the graphite rod close to the anode is tapered, the taper angle is 30 degrees, and the distance between the graphite cathode and the anode target is 1.5 mm. Vacuum chamber up to 5×10 -3 After Pa, 20ml of acetonitrile was introduced into the vacuum cavity. Turn on the DC power supply, adjust the voltage to 20-40V, plasma arc discharge occurs between the anode target and the cathode, and the arc discharge current is 100A. During the arc discharge process, adjust the working current and voltage to keep relatively stable, and the arc maintenance time is 80 minutes , prepared in the above atmosphere to...

Embodiment 3

[0072] Preparation of loaded Ni by high temperature plasma arc evaporation technique 3 Fe@C nanocapsules and multilayer graphite sheet structure with N-doped defects:

[0073] In the plasma arc discharge evaporation process, the consumed anode target material is a rod structure (φ6mm) pressed by 2.69at.% Fe powder, 5.73at.% Ni powder and 91.58at.% graphite powder, and the cathode The end of the graphite rod close to the anode is tapered, the taper angle is 30 degrees, and the distance between the graphite cathode and the anode target is 1.2 mm. Vacuum chamber up to 5×10 -3 After Pa, 20ml of acetonitrile was introduced into the vacuum cavity. Turn on the DC power supply, adjust the voltage to 18-60V, plasma arc discharge occurs between the anode target and the cathode, and the arc discharge current is 150A. During the arc discharge process, adjust the working current and voltage to keep relatively stable, and the arc maintenance time is 15 minutes , prepared in the above atm...

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Abstract

The invention aims to provide a Ni3Fe-coated C nanocapsule-loaded multi-layer graphite lamellar structure with N doping defects and a preparation method of the Ni3Fe-C nanocapsule-loaded multi-layer graphite lamellar structure. The Ni3Fe-coated C nanocapsule-loaded multi-layer graphite lamellar structure is prepared by adopting a high-temperature plasma arc evaporation technology, a high-purity graphite rod serves as a cathode, a high-purity Fe powder, high-purity Ni powder and high-purity graphite powder mixed block serves as an anode, and after an electric arc furnace is vacuumized, and acetonitrile or acetonitrile and N2 are introduced, and after the plasma arc discharge is finished, the sediment on the inner wall of the reaction cavity is collected to obtain the Ni3Fe-coated C nanocapsule compound uniformly dispersed on the wrinkled N-doped nanosheet graphite of a large lamella. The product can be massively prepared by utilizing a simple and harmless high-temperature plasma arc evaporation method without any reaction gas, the doping of the N element enables the nanosheet layer graphite to become disordered and full of a large number of defects, the nanosheet layer graphite is induced to generate new performance, good electromagnetic matching is formed together with a Ni3Fe-coated C soft magnetic phase, and therefore, wide application to the fields of wave absorption, corrosion prevention and the like can be achieved.

Description

technical field [0001] The invention belongs to the field of materials, and relates to a Ni-loaded 3 A novel synthesis technique of Fe@C nanocapsules and multilayer graphite sheet structure with N-doped defects, using the plasma arc evaporation method, provides a method in situ, by introducing catalytic gas acetonitrile, which can be mass-produced in situ Production loaded with Ni 3 Fe@C nanocapsules with multilayer graphite sheet structure with N-doped defects. Background technique [0002] In recent years, while the rapid development and popularization of various electronic devices has brought great convenience to people, at the same time, the electromagnetic radiation and electromagnetic interference generated by electronic devices have seriously affected people's production and life. The harm caused by electromagnetic waves is mainly reflected in the following aspects: [0003] Electromagnetic radiation can cause harm to human health through thermal effects, non-therm...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/184C01B32/21B22F1/02C23C14/18C23C14/32B82Y40/00B82Y30/00H05K9/00
CPCC01B32/184C01B32/21C23C14/325C23C14/18C23C14/223C23C14/0021B82Y40/00B82Y30/00H05K9/0081C01B2204/32C01B2204/04B22F1/17
Inventor 马嵩李帅贞耿殿禹刘伟张志东
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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