Main oscillation power amplification laser and preparation method thereof

Abstract

The invention discloses a main oscillation power amplification laser. The main oscillation power amplification laser comprises a substrate; an epitaxial layer arranged on the substrate, wherein the epitaxial layer sequentially comprises a lower limiting layer, a lower waveguide layer, an active layer, a first upper waveguide layer and a second upper waveguide layer from the substrate to the top, and the second upper waveguide layer is in contact with a partial region of the first upper waveguide layer; a main control oscillator structure which is arranged on the surface of the first upper waveguide layer, and is a ridge-shaped waveguide structure; and a power amplifier structure which is arranged on the surface of the second upper waveguide layer, is coupled with the master control oscillator structure, and is a conical waveguide structure.

Description

technical field [0001] The invention relates to the field of semiconductor lasers, in particular to a main oscillation power amplified laser and a preparation method. Background technique [0002] In recent years, with the maturity of semiconductor laser technology, significant progress has been made in the research of high-power semiconductor lasers at home and abroad. High-power semiconductor lasers not only have the advantages of small size, light weight, high conversion efficiency, long life, high reliability, and simple structure, but their manufacturing process is also compatible with the production process of semiconductor integrated circuits, and has become the core of current optoelectronic devices. technology. High-power semiconductor laser is a kind of optoelectronic device with a wide range of uses. Its biggest feature is the diversity of wavelengths, almost including 650-1700nm. It is widely used in communications, military, industry, medical and other fields. ...

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Problems solved by technology

[0003] With the continuous expansion of the application field of high-power semiconductor lasers and the improvement of the output power requirements of semiconductor lasers, high-power semiconductor lasers with good beam quality have become an important development direction, but in order to obtain high-quality high-power output on a single device very difficult

The ridge waveguide has a small lateral dimension, and the output power is limited to a lower range. Although increasing its lateral dimension can increase the output optical power, problems such as multi-transverse mode output will occur, which will reduce the beam quality.

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