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Self-rectification memristor, preparation method and application thereof

A memristor and self-rectification technology, which is applied in the field of semiconductor devices, can solve problems such as increasing the complexity of cross-array configuration, and achieve the effects of suppressing sneak current effects, improving rectification performance, and reducing power consumption

Active Publication Date: 2021-08-03
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above defects or improvement needs of the prior art, the present invention provides a self-rectifying memristor, a preparation method and its application, the purpose of which is to use a metal-doped oxide resistive layer to change the energy band structure of the device , improve the rectification performance of the device, suppress the sneak current effect in the large-scale crossbar switch array, and thus solve the current technical problem that needs to integrate additional devices, thus increasing the complexity of the crossbar array configuration

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  • Self-rectification memristor, preparation method and application thereof

Examples

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Embodiment 1

[0031] This embodiment provides a method for preparing a self-rectifying memristor, comprising the following steps:

[0032] (1) Prepare the bottom electrode: place the substrate on the tray of the magnetron sputtering chamber, install the titanium nitride target on the target source of the chamber, and pump the background vacuum of the chamber to less than 2×10 -6 Torr, argon with a purity of 99.999% was introduced as the working gas, the sputtering pressure was 3mTorr, the sputtering power of the titanium nitride target was 94W, the sputtering time was 83 minutes, and the thickness was 100nm;

[0033] (2) Prepare the resistive layer: place the substrate on the tray of the magnetron sputtering chamber, respectively install the niobium target and the copper target on the target source of the chamber, and evacuate the background vacuum of the chamber to less than 2×10 -6 Torr, argon and oxygen are introduced as working gases, the gas flow ratio of argon and oxygen is 12:6, the...

Embodiment 2

[0042] This embodiment provides a method for preparing a self-rectifying memristor with a cross structure, comprising the following steps:

[0043] (1) Preparation of the bottom electrode: After the bottom electrode pattern is etched on the substrate, the substrate is placed on the tray of the magnetron sputtering chamber, and the tungsten target and the titanium nitride target are respectively installed on the target source of the chamber materials, and the background vacuum of the chamber is evacuated to less than 2×10 -6 Torr, argon with a purity of 99.999% is introduced as the working gas, the sputtering pressure is 3mTorr, the sputtering power of the tungsten target is 63W, the sputtering time is 5 minutes, and the thickness is 15nm; the sputtering of the titanium nitride target The power is 107W, the sputtering time is 8 minutes, and the thickness is 10nm, and a laminated bottom electrode of tungsten and titanium nitride is prepared;

[0044] (2) Prepare the resistive l...

Embodiment 3

[0049] In this example, a self-rectifying memristor is prepared according to the same method as in Example 1, the difference is that the resistive layer is prepared: the substrate is placed on the tray of the magnetron sputtering chamber, on the target source of the chamber Install the niobium target and the copper target respectively, and pump the background vacuum of the chamber to less than 2×10 -6 Torr, argon and oxygen are introduced as working gases, the gas flow ratio of argon and oxygen is 12:6, the sputtering pressure is 2mTorr, copper-doped niobium oxide and niobium target are deposited by magnetron co-sputtering technology The sputtering power of the target is 141W, the sputtering time is 7 minutes, and the thickness is 20nm; the sputtering power of the copper target is 27W, the sputtering time is 7 minutes, and the thickness is 1.7nm. The calculated thickness ratio of copper doping is 7.8 %.

[0050] Figure 5 is the current-voltage (I-V) curve of the self-rectif...

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Abstract

The invention discloses a self-rectification memristor, a preparation method and application thereof, and belongs to the field of semiconductor devices. The preparation method comprises the following steps: (1) depositing an oxide resistive layer on the surface of a bottom electrode, wherein the oxide resistive layer is doped with at least one metal; and (2) depositing a top electrode made of a material different from that of the bottom electrode on the surface of the resistive layer to obtain the self-rectification memristor. The metal-doped oxide resistive layer is adopted, so that the energy band structure of the device is changed, the rectification performance of the device is improved, the sneak current effect in a large-scale crossbar switch array is inhibited, the integration degree of the array is greatly improved, and the power consumption of the array is greatly reduced. Therefore, the technical problem that the complexity of cross array configuration is increased due to the fact that extra devices need to be integrated at present is solved.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, and more specifically relates to a self-rectifying memristor, a preparation method and an application thereof. Background technique [0002] With the further development of an intelligent society, memristors have received widespread attention in the field of neuromorphic computing in recent years because they can imitate the information processing methods of the human brain. Artificial neural networks based on memristors are helpful Realize high-performance computing architecture and meet computing power requirements for information processing. At the same time, as a new type of nanometer device, due to its simple sandwich structure, a crossbar structure can be used to construct a high-density integrated array to realize a large-scale artificial neural network. However, when the cross-array structure is used, there is a sneak-path current effect, which interferes with the reading of the resi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/841H10N70/881H10N70/231H10N70/011Y02D10/00
Inventor 郭新黄静楠黄鹤鸣
Owner HUAZHONG UNIV OF SCI & TECH
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