High-precision edge grinding device for monocrystalline silicon epitaxial wafer

Abstract

The invention discloses a high-precision edge grinding device for a monocrystalline silicon epitaxial wafer. The high-precision edge grinding device for the monocrystalline silicon epitaxial wafer comprises a machine table, a bearing seat, a material taking device and a grinding mechanism. The bearing seat is installed on the machine table; a rotary table is machined in the middle of the bearing seat; a cover plate is hinged to the bearing seat; a grinding mechanism is installed on the bottom face of the cover plate, and the grinding mechanism comprises a pressing plate, a grinding roller, scraping plates, cleaning pieces and a liquid supply pipe; a groove for mounting the grinding roller is formed in the pressing plate; the liquid supply pipe for spraying a lubricant is arranged at the top in the groove; the scraping plates are arranged on the two sides of the grinding roller; the cleaning pieces are arranged on the two sides of the pressing plate; and the material taking device is mounted on one side of the rotary table. The rotary table is arranged in the bearing seat, the grinding mechanism for grinding the epitaxial wafer on the rotary table is installed on the bottom face of the cover plate on the bearing seat, the rotary table is used for driving the epitaxial wafer to rotate, edge grinding is conducted on the epitaxial wafer in cooperation with the grinding mechanism, and therefore the edge grinding efficiency of the epitaxial wafer can be improved; and meanwhile, by arranging a gasket, the bearing area of the epitaxial wafer can be increased, the stability is improved, and the safety of the epitaxial wafer in the edge grinding process is guaranteed.

Description

technical field [0001] The invention relates to the field of epitaxial wafer processing equipment, in particular to a high-precision edging device for single crystal silicon epitaxial wafers. Background technique [0002] Epitaxy is one of the semiconductor processes. The epitaxial wafer uses a silicon wafer as the substrate, and then grows a layer of single crystal silicon on the substrate. This layer of single crystal silicon is called the epitaxial layer, and the epitaxial wafer is on the substrate. The epitaxial layer of the silicon wafer is made. Most of the existing silicon wafers are cut into smaller shapes by laser after processing. However, during the growth process of the epitaxial wafer, there will be more edge deposition, and the edge of the epitaxial wafer produced If it is too thick, it will directly lead to the abnormality of the subsequent process. For this reason, the single crystal silicon needs to be polished to ensure that the specifications of the epitax...

AI Technical Summary

Problems solved by technology

[0002] Epitaxy is one of the semiconductor processes. The epitaxial wafer uses a silicon wafer as the substrate, and then grows a layer of single crystal silicon on the substrate. This layer of single crystal silicon is called the epitaxial layer, and the epitaxial wafer is on the substrate. The epitaxial layer of the silicon wafer is made. Most of the existing silicon wafers are cut into smaller shapes by laser after processing. However, during the growth process of the epitaxial wafer, there will be more edge deposition, and the edge of the epitaxial wafer produced It is too thick, which directly leads to the abnormality of the subsequent process. For this reason, the single crystal silicon needs to be polished to ensure that the specifications of the epitaxial wafer are consistent, so as to improve the yield of subsequent processing.

The existing epitaxial wafer grinding device has low processing efficiency and is easy to cause damage to the epitaxial wafer

Images