Preparation and application of bismuth vanadate/Vo-FeNiOOH composite photo-anode

Abstract

The invention discloses a preparation method of a bismuth vanadate / Vo-FeNiOOH composite photo-anode, which comprises the following steps of: firstly, a BiVO4 electrode is prepared on FTO glass by adopting a method of combining electro-deposition and annealing treatment; then FeSO4. 7H2O and Ni (NO3) 2.6 H2O are used as electrolyte solutions, a photoelectric deposition method is adopted, a cocatalyst FeNiOOH is grown on the surface of BiVO4, and a BiVO4 / FeNiOOH photo-anode is prepared; and finally, sodium borohydride is used as a reducing agent, the BiVO4 / FeNiOOH photo-anode is soaked in a NaBH4 solution, oxygen vacancies are introduced into the surface of the BiVO4 / FeNiOOH photo-anode, and the BiVO4 / Vo-FeNiOOH composite photo-anode is obtained. According to the invention, an oxygen vacancy (Vo) is successfully manufactured in situ on a cocatalyst film FeNiOOH on the surface of BiVO4 by adopting a simple, convenient and economical NaBH4 reduction method, so that the service life of a BiVO4 carrier is prolonged, the transfer of interface charges and the recombination of surface charges are effectively inhibited, and the PEC performance is improved. Meanwhile, oxygen vacancies are introduced, so that more active sites are increased, and rapid water oxidation kinetics can be realized when the catalyst is used for photoelectrochemical decomposition of water.

Description

technical field [0001] The invention belongs to the field of photoelectrochemical technology, in particular to a BiVO 4 / Vo-FeNiOOH composite photoanode preparation and application. Background technique [0002] In recent years, energy and environmental crises have seriously restricted the rapid development of the global economy and people's pursuit of a better life. Photoelectrochemical (PEC) water splitting is a promising strategy for converting solar energy into clean energy, in which the apparent separation of photogenerated charges plays an important role. Bismuth vanadate (BiVO 4 ) have been considered as ideal photoanode materials due to their suitable bandgap, good band edge position, nontoxicity and good stability. However, the intrinsically short hole diffusion length and low carrier mobility lead to high charge recombination, which limits its performance. [0003] To overcome the aforementioned problems, various strategies have been employed, such as morpholog...

AI Technical Summary

Problems solved by technology

Although many researchers now propose a series of schemes to suppress the recombination of electrons and holes, especially coupled electrocatalysts, electrocatalysts are coupled to semiconductors by electrodeposition, and the electrocatalysts made in this way are relatively thick, and the semiconductor and electrocatalyst The coupling between the catalysts is not tight, so that the recombination of electrons and holes is still very serious

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